MMBTH10 Features High Current Gain Bandwidth Product Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators NPN VHF/UHF Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Transistors Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 SOT-23 Thermal Resistance: 556 /W Junction to Ambient A Parameter Symbol Rating Unit D V Collector-Base Voltage 30 V CBO 3 V Collector-Emitter Voltage 25 V B CEO C 1 2 V Emitter-Base Voltage 3 V EBO F E I Continuous Collector Current 50 mA C P Power Dissipation 225 mW D G H J Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. L K Marking: 3EM DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 3 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 1 1.BASE G 0.01 0.15 0.0004 0.006 2.EMITTER H 0.035 0.043 0.90 1.10 3.COLLECTOR J 0.003 0.007 0.08 0.18 2 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-3-12012020 1/4 MCCSEMI.COMMMBTH10 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =100A, I =0 Collector-Base Breakdown Voltage 30 V (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 25 V (BR)CEO C B Emitter-Base Breakdown Voltage V 3 V I =10A, I =0 (BR)EBO E C Collector Cutoff Current I 0.1 A V =25V, I =0 CBO CB E Emitter Cutoff Current I 0.1 A V =2V, I =0 EBO EB C DC Current Gain h 60 V =10V, I =4mA FE CE C Collector-Emitter Saturation Voltage V 0.5 V I =4mA, I =0.4mA CE(sat) C B Base-Emitter Saturation Voltage V 0.95 V I =4mA, V =10V BE(sat) C CE Transition Frequency f 650 MHz V =10V, I =4mA, f=100MHz T CE C Collector-Base Capacitance C 0.7 pF V =10V, I =0,f=1MHz CB CB E Collector-Base Feedback Capacitance C 0.65 pF V =10V, I =0,f=1MHz RB CB E Rev.3-3-12012020 2/4 MCCSEMI.COM