BAV20WS-TP Micro Commercial Components (MCC)

BAV19WS,BAV20WS,BAV21WS Features Silicon Epitaxial Planar Diodes For General Purpose 250mW This Diode is Also Available in Other Case Halogen Free. Green Device (Note 1) Small Signal Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Diodes Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) 120 to 250 Volts Maximum Ratings Operating Junction Temperature Range: -65C to +150C Storage Temperature Range: -65C to +150C Thermal Resistance:500C/W Junction to Ambient SOD-323 Maximum Recurrent Maximum Continuous MCC Device Peak RMS Reverse Part Number Marking Reverse Voltage Voltage A Voltage B BAV19WS A8 120V 71V 100V C E BAV20WS T2 200V 106V 150V BAV21WS T3 250V 141V 200V Cathode Mark H D Peak Forward I Note2 400mA FM Current J G Average Rectified I Note2 200mA o Output Current DIMENSIONS INCHES MM 9.0A t=1s DIM NOTE MIN MAX MIN MAX Peak Forward t=100s 3.0A I FSM A 0.090 0.107 2.30 2.70 Surge Current 1.7A t=10ms B 0.063 0.071 1.60 1.80 t=1s 0.5A C 0.045 0.053 1.15 1.35 D 0.031 0.045 0.80 1.15 Repetitive Peak (2) E 0.010 0.016 0.25 0.40 I 625mA FRM f>50Hz, Ta=25C Forward Curren G 0.004 0.018 0.10 0.45 H 0.004 0.010 0.10 0.25 (2) J ----- 0.006 ----- 0.15 P Power Dissipation 250mW tot Ta=25C Suggested Solder Pad Layout Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 1.88mm 2. Valid Provided that Terminals are Kept at Ambient Temperature 0.69mm 0.56mm Rev.3-5-10252021 1/4 MCCSEMI.COMBAV19WS,BAV20WS,BAV21WS Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Conditions Symbol Min. Typ. Max. Units I =100mA 1 V F Forward Voltage V F I =200mA 1.25 V F Dynamic Forward Resistance r I =10mA 5 f F V =100V BAV19WS 100 nA R V =150V BAV20WS 100 nA R V =200V BAV21WS 100 nA R I Reverse Current R V =100V, T =100C BAV19WS 15 A R J V =150V, T =100C BAV20WS 15 A R J V =200V, T =100C BAV21WS 15 A R J Junction Capacitance C V = 0V, f = 1MHz 1.5 pF J R I =I =30mA, F R Reverse Recovery Time t 50 ns rr I =0.1*I ,R =100 rr R L * Pulse Test: Pulse Width 300 sec, Duty Cycle 2% Rev.3-5-10252021 2/4 MCCSEMI.COM