BAV21WSHE3-TP Micro Commercial Components (MCC)

BAV19WSHE3 THRU BAV21W SHE3 Features Halogen Free.Gree Device (Note 1) AEC-Q101 Qualified Silicon Epitaxial Planar Diodes 250mW For General Purpose Small Signal Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Diodes Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) 120 to 250 Volts Maximum Ratings Operating Junction Temperature Range: -65C to +150C Storage Temperature Range: -65C to +150C Thermal Resistance:500C/W Junction to Ambient SOD-323 Maximum Recurrent Maximum Continuous MCC Device Peak RMS Reverse Part Number Marking Reverse Voltage Voltage A Voltage B BAV19WSHE3 A8 120V 71V 100V C E BAV20WSHE3 T2 200V 106V 150V BAV21WSHE3 T3 250V 141V 200V Cathode Mark H D Peak Forward I Note1 400mA FM Current J G Average Rectified I Note1 200mA o Output Current DIMENSIONS Peak Forward 2.5A t=1s I INCHES MM FSM DIM NOTE t=1s Surge Current 0.5A MIN MAX MIN MAX A 0.090 0.107 2.30 2.70 Repetitive Peak B 0.063 0.071 1.60 1.80 (Note 2) I 625mA FRM f>50Hz, Ta=25C C 0.045 0.053 1.15 1.35 Forward Curren D 0.031 0.045 0.80 1.15 E 0.010 0.016 0.25 0.40 (1) P Power Dissipation 250mW tot Ta=25C G 0.004 0.018 0.10 0.45 H 0.004 0.010 0.10 0.25 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, J ----- 0.006 ----- 0.15 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2. Valid Provided that Terminals are Kept at Ambient Temperature Suggested Solder Pad Layout 1.88mm 0.69mm 0.56mm Rev.3-4-12012020 1/4 MCCSEMI.COMBAV19WSHE3 THRU BAV21WSHE3 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Conditions Symbol Min. Typ. Max. Units I =100mA 1 V F Forward Voltage V F I =200mA 1.25 V F Dynamic Forward Resistance r I =10mA 5 f F V =100V BAV19WSHE3 100 nA R V =150V BAV20WSHE3 100 nA R V =200V BAV21WSHE3 100 nA R I Reverse Current R V =100V, T =100C BAV19WSHE3 15 A R J V =150V, T =100C BAV20WSHE3 15 A R J V =200V, T =100C BAV21WSHE3 15 A R J Junction Capacitance C V = 0V, f = 1MHz 1.5 pF J R I =I =30mA, F R Reverse Recovery Time t 50 ns rr I =0.1*I ,R =100 rr R L * Pulse Test: Pulse Width 300 sec, Duty Cycle 2% Rev.3-4-12012020 2/4 MCCSEMI.COM