X-On Electronics has gained recognition as a prominent supplier of DTC114TCA-TP Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC114TCA-TP Bipolar Transistors - Pre-Biased are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC114TCA-TP Micro Commercial Components (MCC)

DTC114TCA-TP electronic component of Micro Commercial Components (MCC)
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Part No.DTC114TCA-TP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased Sgle NPN, 100mA
Datasheet: DTC114TCA-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0467 ea
Line Total: USD 140.1 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 05 Sep to Mon. 09 Sep
MOQ : 3000
Multiples : 3000
3000 : USD 0.0415
9000 : USD 0.0356
24000 : USD 0.0332
45000 : USD 0.032
99000 : USD 0.0309

   
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We are delighted to provide the DTC114TCA-TP from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC114TCA-TP and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTC114TCA Features Built-In Bias Resistors Enable the Configuration of an Inverter Circuit Without Connecting External Input Resistors The Bias Resistors Consist of Thin-Film Resistors With Complete NPN Isolation to Allow Negative Biasing of the Input. They Also Have Digital Transistor the Advantage of Almost Completely Eliminating Parasitic Effects Only the On/Off Conditions Need to Be Set For Operation, Making Device Design Easy Halogen Free.Gree Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating SOT-23 Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant.See Ordering Information) A D Maximum Ratings 25C Unless Otherwise Specified 3 1:Base B C 2:Emitter Parameter Symbol Value Unit 2 1 3:Collcetor V 50 Collector-Emitter Voltage V CEO F E V 50 Collector-Base Voltage V CBO G H J V Emitter-Base Voltage 5 V EBO L K 100 I mA Collector Current-Continuous C DIMENSIONS Collector Dissipation P 200 mW C INCHES MM DIM NOTE MIN MAX MIN MAX T 150 Junction Temperature J A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 T Storage Temperature Range -55 to +150 STG C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, E 0.067 0.083 1.70 2. 10 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. F 0.018 0.024 0.45 0.60 G 0.01 0.15 0.0004 0.006 Device Marking04 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.00 7 0.020 0.20 0.50 Internal Structure Suggested Solder Pad Layout 0.031 C 0.800 0.035 R1 0.900 B 0.079 inches 2.000 mm E 0.037 0.950 B:Base 0.037 C:Collcetor 0.950 E:Emitter Rev.3-4-09032021 1/4 MCCSEMI.COMDTC114TCA Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =50A, I =0 Collector-Base Breakdown Voltage 50 --- --- V (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 50 --- --- V (BR)CEO C B Emitter-Base Breakdown Voltage V 5 --- --- V I =50A, I =0 (BR)EBO E C I V =50V,I =0 Collector Cut -off Current --- --- 0.5 A CBO CB E I V =4V,I =0 Emitter Cut-off Current --- --- 0.5 A EBO EB C DC Current Gain h 100 300 600 --- I =1mA, V =5V FE C CE Collector-Emitter Saturation Voltage V I =10mA, I =1mA --- --- 0.3 V CE(sat) C B R Input Resistance 7 10 13 K 1 Transition Frequency f --- 250 --- MHz V =10.0V, I =-5mA, f=100MHz T CE E Rev.3-4-09032021 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MCC(Micro Commercial Components)
MICRO COMMERCIAL
Micro Commercial Co
Micro Commercial Components

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