DTC114TE FeaturesFeaturesFeatures Built-In Bias Resistors Enable the Configuration of an Inverter Circuit Without Connecting External Input Resistors The Bias Resistors Consist of Thin-Film Resistors With Complete NPN Isolation to Allow Negative Biasing of the Input. They Also Have Digital Transistor the Advantage of Almost Completely Eliminating Parasitic Effects Only the On/Off Conditions Need to Be Set For Operation, Making Device Design Easy Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS SOT-523 Compliant.See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified A D Value Parameter Symbol Unit 3 1:Base C B V 2:Emitter Collector-Emitter Voltage 50 V CEO 3:Collcetor 1 2 V 50 Collector-Base Voltage V CBO F E Emitter-Base Voltage V 5 V EBO H J G 100 I mA Collector Current-Continuous C K Collector Dissipation P 150 mW C DIMENSIONS T 150 Junction Temperature J INCHES MM DIM NOTE T Storage Temperature Range -55 to +150 MIN MAX MIN MAX STG A 0.059 0.067 1.50 1.70 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, B 0.030 0.033 0.75 0.85 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 0.057 0.069 1.45 1.75 C 0.020 0.50 TYP. D E 0.035 0.043 0.90 1.10 G 0.000 0.004 0.00 0.10 H 0.024 0.031 0.60 0.80 J 0.004 0.008 0.10 0.20 Device Marking04 K 0.006 0.014 0.15 0.35 Internal Structure Suggested Solder Pad Layout 3 R1 (mm) 1 2 Rev.3-4-09032021 1/4 MCCSEMI.COMDTC114TE Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =50A, I =0 Collector-Base Breakdown Voltage 50 --- --- V (BR)CBO C E Collector-Emitter Breakdown Voltage V 50 --- --- V I =1mA, I =0 (BR)CEO C B V I =50A, I =0 Emitter-Base Breakdown Voltage 5 --- --- V (BR)EBO E C I V =50V,I =0 Collector Cut-off Current --- --- 0.5 A CBO CB E Emitter Cut-off Current I --- --- 0.5 A V =4V,I =0 EBO EB C h I =1mA, V =5V DC Current Gain 100 300 600 --- FE C CE V I =10mA, I =1mA Collector-Emitter Saturation Voltage --- --- 0.3 V CE(sat) C B Input Resistance R 7 10 13 K 1 f V =10.0V, I =-5mA, f=100MHz Transition Frequency --- 250 --- MHz T CE E Rev.3-4-09032021 2/4 MCCSEMI.COM