DTC114TUA Features Built-In Bias Resistors Enable the Configuration of an Inverter Circuit Without Connecting External Input Resistors The Bias Resistors Consist of Thin-Film Resistors With Complete NPN Isolation to Allow Negative Biasing of the Input. They Also Have Digital Transistor the Advantage of Almost Completely Eliminating Parasitic Effects Only the On/Off Conditions Need to Be Set For Operation, Making Device Design Easy Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant.See Ordering Information) SOT-323 Maximum Ratings 25C Unless Otherwise Specified A D Value Parameter Symbol Unit 1. IN C B Collector-Emitter Voltage V 50 V CEO 2. GND 3. OUT V 50 Collector-Base Voltage V CBO F E V 5 Emitter-Base Voltage V EBO H J G I 100 mA Collector Current-Continuous C K L P 200 Collector Dissipation mW C DIMENSIONS T Junction Temperature 150 INCHES MM J DIM NOTE MIN MAX MIN MAX T -55 to +150 Storage Temperature Range STG A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, C 0.083 0.096 2.10 2.45 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 0.026 0.65 D TYP. E 0.047 0.055 1.20 1.40 F 0.012 0.016 0.30 0.40 G 0.000 0.004 0.00 0.10 Device Marking04 H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 Internal Structure 4VHHFTUFE 4PMEFS 1BE -BZPVU C 0.70 (mm) R1 B 0.90 1.90 E B:Base C:Collcetor E:Emitter 0.65 0.65 Rev.3-4-09032021 1/4 MCCSEMI.COMDTC114TUA Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V I =50A, I =0 Collector-Base Breakdown Voltage 50 --- --- V (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 50 --- --- V (BR)CEO C B Emitter-Base Breakdown Voltage V 5 --- --- V I =50A, I =0 (BR)EBO E C I V =50V,I =0 Collector Cut-off Current --- --- 0.5 A CBO CB E I V =4V,I =0 Emitter Cut-off Current --- --- 0.5 A EBO EB C DC Current Gain h 100 300 600 --- I =1mA, V =5V FE C CE Collector-Emitter Saturation Voltage V I =10mA, I =1mA --- --- 0.3 V CE(sat) C B R Input Resistance 7 10 13 K 1 Transition Frequency f --- 250 --- MHz V =10.0V, I =-5mA, f=100MHz T CE E Rev.3-4-09032021 2/4 MCCSEMI.COM