DTC124EE FeaturesFeaturesFeatures Built-In Bias Resistors Enable the Configuration of an Inverter Circuit Without Connecting External Input Resistors The Bias Resistors Consist of Thin-Film Resistors With Complete NPN Isolation to Allow Negative Biasing of the Input. They Also Have Digital Transistor the Advantage of Almost Completely Eliminating Parasitic Effects Only the On/Off Conditions Need to Be Set For Operation, Making Device Design Easy Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS SOT-523 Compliant.See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified A D Parameter Symbol Min Typ Max Unit 3 1:IN V 2:GND Supply Voltage --- 50 --- V CC C B 3:OUT V Input Voltage -10 --- 40 V IN 1 2 F E I --- 30 --- mA O Output Current H J I --- 100 --- mA C(Max) G K P Power Dissipation --- 150 --- mW D T Junction Temperature --- --- 150 J DIMENSIONS INCHES MM T Storage Temperature -55 --- 150 stg DIM NOTE MIN MAX MIN MAX A 0.059 0.067 1.50 1.70 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. B 0.030 0.033 0.75 0.85 0.057 0.069 1.45 1.75 C 0.020 0.50 TYP. D E 0.035 0.043 0.90 1.10 G 0.000 0.004 0.00 0.10 H 0.024 0.031 0.60 0.80 J 0.004 0.008 0.10 0.20 Device Marking25 K 0.006 0.014 0.15 0.35 Internal Structure OUT Suggested Solder Pad Layout 3 R1 (mm) IN 1 R2 2 GND(+) IN OUT GND(+) Rev.3-4-12012020 1/4 MCCSEMI.COMDTC124EE Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Unit Conditions V V =5V, I =100A 0.5 --- --- V I(off) CC O Input Voltage V =0.2V, I =5mA V --- --- 3.0 V O O I(on) V I =10mA,I =0.5mA Output Voltage --- 0.1 0.3 V O(on) O I I V =5V Input Current --- --- 0.36 mA I I I V =50V, V =0 Output Current --- --- 0.5 A O(off) CC I G V =5V, I =5mA DC Current Gain 56 --- --- I O O R Input Resistance 15.4 22 28.6 K 1 R /R Resistance Ratio 0.8 1.0 1.2 2 1 f V =10V, I =-5mA, f=100MHz Transition Frequency --- 250 --- MHz T CE E Rev.3-4-12012020 2/4 MCCSEMI.COM