DTC144TUA Features Built-In Bias Resistors Enable the Configuration of an Inverter Circuit Without Connecting External Input Resistors The Bias Resistors Consist of Thin-Film Resistors With Complete Isolation to Allow Negative Biasing of the Input. They Also Have NPN the Advantage of Almost Completely Eliminating Parasitic Effects Digital Transistor Only the On/Off Conditions Need to Be Set For Operation, Making Device Design Easy Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified SOT-323 Parameter Symbol Value Unit A D V 50 Collector-Emitter Voltage V CEO 1:Base Collector-Base Voltage V 50 V CBO C 2:Emitter B 3:Collcetor V 5 Emitter-Base Voltage V EBO F E 100 I mA Collector Current-Continuous C H J P Collector Dissipation 200 mW G C K T 150 Junction Temperature J L DIMENSIONS T Storage Temperature Range -55 to +150 STG INCHES MM DIM NOTE MIN MAX MIN MAX Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. A 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 B C 0.083 0.096 2.10 2.45 0.026 0.65 D TYP. Device Marking06 E 0.047 0.055 1.20 1.40 F 0.012 0.016 0.30 0.40 G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 Internal Structure J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 C 4VHHFTUFE 4PMEFS 1BE -BZPVU R1 0.70 B (mm) 0.90 E 1.90 B:Base C:Collcetor E:Emitter 0.65 0.65 Rev.3-4-09032021 1/4 MCCSEMI.COMDTC144TUA Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 50 --- --- V I =50A, I =0 (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 50 --- --- V (BR)CEO C B V I =50A, I =0 Emitter-Base Breakdown Voltage 5 --- --- V (BR)EBO E C Collector Cut-off Current I --- --- 0.5 A V =50V,I =0 CBO CB E I V =4V,I =0 Emitter Cut-off Current --- --- 0.5 A EBO EB C h I =1mA, V =5V DC Current Gain 100 300 600 --- FE C CE V Collector-Emitter Saturation Voltage --- --- 0.3 V I =10mA, I =1mA CE(sat) C B R Input Resistance 32.9 47 61.1 K 1 f V =10.0V, I =-5mA, f=100MHz Transition Frequency --- 250 --- MHz T CE E Rev.3-4-09032021 2/4 MCCSEMI.COM