ES1DE-TP Micro Commercial Components (MCC)

NOT RECOMMENDED FOR NEW DESIGNS USE ES1A-LTP~ES1J-LTP Series M C C TM ES1AE Micro Commercial Components omponents THRU 20736 Marilla Street Chatsworth ES1ME Features Lead Free Finish/Rohs Compliant (Note1) Suffix designates 1 Amp Ultra Fast Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Recovery Moisture Sensitivity Level 1 Silicon Rectifier x High Temp Soldering: 260Cq for 10 Seconds At Terminals x Superfast Recovery Times For High Efficiency 50 to 1000 Volts Halogen free available upon request by adding suffix-H Maximum Ratings x Operating Temperature: -50 qC to +150 qC x Storage Temperature: -50qC to +150 qC DO-214AC x Maximum Thermal Resistance 15qC/W Junction To Lead (SMAE) MCC Maximum Maximum Maximum Part Device Recurrent RMS DC H Number Marking Peak Reverse Voltage Blocking Cathode Band Voltage Voltage ES1AE ES1A 50V 35V 50V ES1BE ES1B 100V 70V 100V J ES1CE ES1C 150V 105V 150V ES1DE ES1D 200V 140V 200V ES1GE ES1G 400V 280V 400V ES1JE ES1J 600V 420V 600V A C ES1KE ES1K 800V 560V 800V ES1ME ES1M 1000V 700V 1000V E D Electrical Characteristics 25q C Unless Otherwise Specified B Average Forward I 1.0A T = 75Cq F(AV) J G Current Peak Forward Surge I 30A 8.3ms, half sine FSM DIMENSIONS Current INCHES MM DIM MIN MAX MIN MAX NOTE Maximum A .079 .096 2.01 2.44 Instantaneous B .045 .071 1.15 1.80 C .002 .008 .05 .20 Forward Voltage D --- .02 --- .51 E .030 .060 .76 1.52 ES1AE-DE V .975V I = 1.0A F FM G .189 .208 4.80 5.30 ES1GE-JE 1.35V H .157 .180 4.00 4.57 T = 25 qC* J J .090 .115 2.29 2.92 ES1KE~ME 1.70V Maximum DC SUGGESTED SOLDER PAD LAYOUT Reverse Current At I 5P A T = 25 qC R J 0.090 Rated DC Blocking 100 P A T = 100qC J Voltage Maximum Reverse Recovery Time 0.085 ES1AE-DE T 50ns I =0.5A, I =1.0A, rr F R ES1GE-KE 75ns I =0.25A rr ES1ME 100ns Typical Junction C 45pF Measured at 0.070 J Capacitance 1.0MHz, V =4.0V R *Pulse test: Pulse width 200 P sec, Duty cycle 2% Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7. www.mccsemi.com Revision: C 2015/10/19 1 of 4M C C TM Micro Commercial Components ES1AE thru ES1ME Figure 1 Typical Forward Characteristics Figure 2 Forward Derating Curve 50 2.4 2.2 ES1AE~DE 2.0 10 ES1GE~JE 1.8 3.0 1.6 1.4 ES1KE~ME 1.0 1.2 Amps 1.0 .8 .6 0.1 .4 Single Phase, Half Wave .2 60Hz Resistive or Inductive Load 0 25 50 75 100 125 150 0 .01 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 C FORWARD VOLTAGE,(V) Average Forward Rectified Current - Amperesversus Ambient Temperature -C Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance 100 60 40 20 T =25C J pF 10 6 4 2 1 .1 .2 .4 1 2 4 10 20 40 100 200 400 1000 Volts Junction Capacitance - pF versus Reverse Voltage - Volts www.mccsemi.com Revision: C 2015/10/19 2 of 4 INSTANTANEOUS FORWARD CURRENT,(A)