ESD3V3D 7,ESD5V0D7,ESD12VD7 Features For Sensitive ESD Protection Excellent Clamping Capability Low Leakage ESD For Space Saving Application Protection Fast Response, Response Time Less than 1ns Moisture Sensitivity Level 1 Device Epoxy Meets UL 94 V-0 Flammability Rating Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) SOD-723 Maximum Ratings Operating Junction Temperature Range: -55C to +150C A Storage Temperature Range: -55C to +150C B Thermal Resistance: 833C/W Junction to Ambient C E MCC Cathode Mark G Device Marking Part Number ESD3V3D7 E0 D F ESD5V0D7 E2 H ESD12VD7 E3 30KV Air DIMENSIONS IEC61000-4-2(ESD) Contact 30KV INCHES MM DIM NOTE MIN MAX MIN MAX Machine 0.4KV JESD22-A114-B(ESD) A 0.051 0.059 1.30 1.50 16KV Human Body B 0.035 0.043 0.90 1.10 C 0.022 0.026 0.55 0.65 Power Dissipation P 150mW D D 0.001 0.003 0.01 0.07 E 0.010 0.014 0.25 0.35 F 0.003 0.006 0.08 0.15 G 0.020 0.023 0.52 0.58 H 0.021 0.026 0.53 0.65 Internal Structure Rev.3-1-01012019 1/4 MCCSEMI.COMESD3V3D7,ESD5V0D7,ESD12VD7 Electrical Characteristics 25C (Unless Otherwise Specified) ESD3V3D7 Parameter Conditions Symbol Min. Typ. Max. Units Reverse Working Voltage V 3.3 V RWM I = 1mA Reverse Breakdown Voltage V 5 V T BR Reverse Leakage Current I V =3.3V 2.5 A R RWM I = 10mA Forward Voltage V 0.9 V F F Peak Pulse Current I t =8/20s 10.4 A PP P I =10.4A, t =8/20s Clamping Voltage V 11.9 V PP P C Peak Pulse Power P t =8/20s 113 W D P V = 0V, f = 1MHz Junction Capacitance C 80 pF R J ESD5V0D7 Parameter Symbol Conditions Min. Typ. Max. Units Reverse Working Voltage V 5 V RWM Reverse Breakdown Voltage V I = 1mA 6.2 V BR T V =5V Reverse Leakage Current I 1 A RWM R Forward Voltage V I = 10mA 0.9 V F F t =8/20s Peak Pulse Current I 8.8 A P PP Clamping Voltage V I =8.8A, t =8/20s 13.3 V C PP P t =8/20s Peak Pulse Power P 117 W P D Junction Capacitance C V = 0V, f = 1MHz 65 pF J R ESD12VD7 Parameter Conditions Symbol Min. Typ. Max. Units Reverse Working Voltage V 12 V RWM I = 1mA Reverse Breakdown Voltage V 13.5 V BR T Reverse Leakage Current I V =12V RWM 1 A R I = 10mA Forward Voltage V 0.9 V F F Peak Pulse Current I t =8/20s 5.4 A PP P I =5.4A, t =8/20s Clamping Voltage V 23.7 V PP P C Peak Pulse Power P t =8/20s 128 W D P V = 0V, f = 1MHz Junction Capacitance C 30 pF R J Rev.3-1-01012019 2/4 MCCSEMI.COM