MUR6060B-BP Micro Commercial Components (MCC)

MUR6060B Features Lead Free Finish/RoHS Compliant(Note 1) Suffix Designates Compliant. See Ordering Information) 60 Amp Halogen Free Available Upon Request By Adding Suffix-H Ultra Fast High Frequency Operation High Surge Forward Current Capability Recovery Rectifier Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 600 Volts Planar Structure Die and Soft Recovery Characteristics Maximum Ratings Operating Junction Temperature Range: -55C to +175C Storage Temperature Range: -55C to +175C Maximum Thermal Resistance: 0.8 C/W Junction to Case TO-247AD Maximum Maximum DC Maximum MCC Device Recurrent Blocking RMS Part Number Marking Peak Reverse Voltage Voltage Voltage K A U T E O MUR6060B MUR6060B 600V 420V 600V D C Electrical Characteristics 25C Unless Otherwise Specifie S B Average Rectified I T =95C 60A C F(AV) R Forward Current Peak Forward Surge P G I 600A 8.3ms,Half Sine FSM Current I J 1.7V(Max.) Instantaneous F T =25C V I =60A H J F F Forward Voltage 1.43V(Typ.) Q Maximum Reverse 10A T =25C J 2 1 I Current At Rated DC R T =125C 500A J Blocking Voltage INCHES MM Typical Junction Measured at DIM NOTE C 415pF J MIN MAX MIN MAX 1.0MHz, V =4V Capacitance R A 0.602 0.642 15.30 16.30 B 0.799 0.839 20.30 21.30 Dynamic Recovery Characteristics 25C Unless Otherwise Specified C 0.189 0.205 4.80 5.20 0.242 6.15 BSC. D 58ns(Typ.) I =0.5A I =1.0A F R E 0.091 0.106 2.30 2.70 I =0.25A 75ns(Max.) RR Reverse Recovery F 0.772 0.796 19.62 20.22 t rr Time G ----- 0.169 ----- 4.30 80ns(Typ.) T =25C J 0.428 10.88 BSC. H 175ns(Typ.) T =125C J I 0.075 0.087 1.91 2.21 I = 40 A F J 0.044 0.054 1.11 1.36 T =25C 7.0A(Typ.) Peak recovery J K 0.189 0.205 4.80 5.20 di /dt = 200 A/s F I RRM current 17A(Typ.) T =125C J O 0.073 0.085 1.85 2.15 V = 200 V R P 0.087 0.103 2.21 2.61 T =25C 280nC(Typ.) Reverse recovery J Q 0.020 0.030 0.51 0.75 Q rr charge R 0.512 0.535 13.00 13.60 1500nC(Typ.) T =125C J S 0.640 0.663 16.25 16.85 Note:1. High Temperature Solder Exemptions Applied, See EU Directive Annex 7a. T 0.134 0.150 3.40 3.80 Internal Structure U ----- 0.287 ----- 7.30 PIN 1 CASE PIN 2 Rev.3-5-11112020 1/3 MCCSEMI.COMMUR6060B Curve Characteristics Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current 70 720 60 600 50 480 40 360 30 240 20 10 120 Resistive or Inductive Load 8.3 ms Single Half Sine-Wave 0 0 0 35 70 105 140 175 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics 60 1000 T =175C J 100 10 T =175C J T =125C J 10 1 T =125C J 0.1 T =25C J 0.01 T =25C J 0.001 1 0.2 0.4 1.4 1.6 20 40 60 80 100 0.6 0.8 1.0 1.2 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Capacitance Characteristics Fig. 6 - Reverse Recovery Waveform and Definitions 1200 (3) t rr T =25C I J F t t a b f=1MHz 1000 0 (4) Q rr 800 (2) I RRM 0.5 I RRM (5) di /dt (rec)M 600 di /dt (1) F 0.75 I RRM 400 (4) Q - area under curve defined by t (1) di /dt - rate of change of current rr rr F and I through zero crossing RRM t x I rr RRM (2) I - peak reverse recovery current 200 Q = RRM rr 2 (3) t - reverse recovery time measured rr (5) di /dt - peak rate of change of (rec)M from zero crossing point of negative current during t portion of t 0 b rr going I to point where a line passing F 0 5 10 15 20 25 30 through 0.75 I and 0.50 I RRM RRM Reverse Voltage (V) extrapolated to zero current. Rev.3-5-11112020 2/3 MCCSEMI.COM Average Forward Current (A) Capacitance Between Terminals (pF) Instantaneous Forward Current (A) Peak Forward Surge Current (A) Instantaneous Reverse Leakage Current (A)