SIC05120B Features Zero Reverse Recovery Current Positive Temperature Coefficient 5 Amp High-Speed Switching Moisture Sensitivity Level 1 Silicon Carbide Epoxy Meets UL 94 V-0 Flammability Rating Schottky Barrier Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant(Note 1) Suffix designates Rectifier RoHS Compliant. See ordering information) Benefits 1200 Volts Temperature-Independent Performance Essentially No Switching Loss Higher Efficiency Reduced EMI TO-220AC Reduction of Heat Sink Requirements Applications Switching Power Supply L B K Power Factor Correction M C Solar Inverter D Maximum Ratings A Operating Junction Temperature Range: -55C to +175C 1 2 Storage Temperature Range: -55C to +175C F Thermal Resistance: 1.65C/W Junction to Case G MCC Device Marking I Part Number N SIC05120B SIC05120B J H Peak Repetitive Reverse V 1200V RRM Voltage Surge Peak Reverse Voltage V 1200V RSM DIMENSIONS INCHES MM DC Reverse Voltage V 1200V DIM NOTE DC MIN MAX MIN MAX A 0.560 0.625 14.22 15.88 B 0.380 0.420 9.65 10.67 T =155C Average Forward Current I 5A J F C 0.100 0.135 2.54 3.43 D 0.230 0.270 5.84 6.86 T =25C, t =10ms, C p Peak Forward Surge Current I 60A F ----- 0.250 ----- 6.35 FSM Half Sine Pulse G 0.500 0.580 12.70 14.73 H 0.190 0.210 4.83 5.33 Repetitive Peak Forward T =25C, t =10ms, C p I 36A FRM I 0.020 0.045 0.51 1.14 Current Half Sine Pulse J 0.012 0.025 0.30 0.64 K 0.139 0.161 3.53 4.09 Power Dissipation P 90W T =25C D C L 0.140 0.190 3.56 4.83 M 0.045 0.055 1.14 1.40 Note :1. High Temperature Solder Exemption Applied, see EU Directive Annex 7a. N 0.080 0.115 2.03 2.92 Internal Structure PIN 1 CASE PIN 2 Rev.3-2-12012020 1/4 MCCSEMI.COMSIC05120B Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Conditions Typ. Max. Units I =5A, T =25C 1.45 1.7 V F J Forward Voltage V F I =5A, T =175C 2.1 2.7 V F J V =1200V, T =25C 3 15 A R J Reverse Leakage Current I R V =1200V, T =175C 15 100 A R J Total Capacitive Charge Q V =800V 27 nC C R V =0V, f=1MHz 353 pF R Total capacitance C V =400V, f=1MHz 25.8 pF R V =800V, f=1MHz 20 pF R Capacitance Stored Energy E V =800V 7.9 J C R Curve Characteristics Fig. 1 - Typical Instantaneous Forward Characteristics Fig. 2 - Typical Reverse Leakage Characteristics 10 100 9 80 8 7 60 6 25C 75C 5 125C 40 175C 175C 4 125C 3 75C 25C 20 2 1 0 0 0 300 600 900 1200 1500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V (V) V (V) R F Rev.3-2-12012020 2/4 MCCSEMI.COM I (A) F I (A) R