SIC10120PTA Features Zero Reverse Recovery Current Positive Temperature Coefficient 10 Amp High-Speed Switching Moisture Sensitivity Level 1 Silicon Carbide Epoxy Meets UL 94 V-0 Flammability Rating Schottky Barrier Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant(Note 1) Suffix designates Rectifier RoHS Compliant. See ordering information) Benefits 1200 Volts Temperature-Independent Performance Essentially No Switching Loss Higher Efficiency TO-247AD Reduced EMI Reduction of Heat Sink Requirements Applications K A U T Switching Power Supply E O Power Factor Correction D C Solar Inverter S B Maximum Ratings R Operating Junction Temperature Range: -55C to +175C Storage Temperature Range: -55C to +175C P G Thermal Resistance: 1.65C/W Junction to Case I J F MCC H Device Marking Part Number Q SIC10120PTA SIC10120PTA 2 1 Peak Repetitive Reverse V 1200V RRM INCHES MM Voltage DIM NOTE MIN MAX MIN MAX A 0.602 0.642 15.30 16.30 Surge Peak Reverse Voltage V 1200V RSM B 0.799 0.839 20.30 21.30 C 0.189 0.205 4.80 5.20 0.242 6.15 TYP. DC Reverse Voltage V 1200V D DC E 0.091 0.106 2.30 2.70 F 0.772 0.796 19.62 20.22 T =155C Average Forward Current I 10A J F G ----- 0.169 ----- 4.30 0.428 10.88 TYP. H T =25C, t =10ms, I 0.075 0.087 1.91 2.21 C p Peak Forward Surge Current I 105A FSM J 0.044 0.054 1.11 1.36 Half Sine Pulse K 0.189 0.205 4.80 5.20 Repetitive Peak Forward T =25C, t =10ms, C p O 0.073 0.085 1.85 2.15 I 35A FRM Current Half Sine Pulse P 0.087 0.103 2.21 2.61 Q 0.020 0.030 0.51 0.75 Power Dissipation P T =25C R 0.512 0.535 13.00 13.60 140W D C S 0.640 0.663 16.25 16.85 T 0.134 0.150 3.40 3.80 Note :1. High Temperature Solder Exemption Applied, see EU Directive Annex 7a. U ----- 0.287 ----- 7.30 Internal Structure PIN 1 CASE PIN 2 Rev.3-2-12012020 1/4 MCCSEMI.COMSIC10120PTA Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Conditions Typ. Max. Units I =10A, T =25C F j 1.5 1.8 V Forward Voltage V F V I =10A, T =175C 3.0 F j 2.2 V =1200V, T=25C A R j 80 2 Reverse Leakage Current I R A V =1200V, T=175C 35 R j Total Capacitive Charge Q 60 nC C V =800V, T =2=25C R j 750 pF V =0V, T=25C , f=1MHz R j Total capacitance C 55 pF V =400V, T=25C , f=1MHz R j pF 45 V =800V, T=25C , f=1MHz R j Capacitance Stored Energy E J C 16 V =800V R Curve Characteristics(Per leg) Fig. 1 - Typical Instantaneous Forward Characteristics Fig. 2 - Typical Reverse Leakage Characteristics 20 1000 18 Tj=25C 100 Tj=25C 16 Tj=75C Tj=75C Tj=125C Tj=125C 14 Tj=175C 10 Tj=175C 12 10 1 8 0.1 6 4 0.01 2 1E-3 0 200 400 600 800 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V (V) V (V) F R Rev.3-2-12012020 2/4 MCCSEMI.COM I (A) F I (A) R