SICU02120B Features Zero Reverse Recovery Current Positive Temperature Coefficient 2 Amp High-Speed Switching Moisture Sensitivity Level 1 Silicon Carbide Epoxy Meets UL 94 V-0 Flammability Rating Schottky Barrier Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant(Note 1) Suffix designates Rectifier RoHS Compliant. See ordering information) Benefits 120 0 Volts Temperature-Independent Performance Essentially No Switching Loss Higher Efficiency Reduced EMI Reduction of Heat Sink Requirements Applications J Switching Power Supply H Power Factor Correction C 1 O Solar Inverter 2 4 F E I 3 Maximum Ratings M K V Operating Junction Temperature Range: -55C to +175C Q Storage Temperature Range: -55C to +175C A Thermal Resistance: 3C/W Junction to Case G L D B MCC Device Marking Part Number SICU02120B SICU02120B DIMENSIONS INCHES MM DIM NOTE Peak Repetitive Reverse MIN MAX MIN MAX V 1200V RRM Voltage A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 Surge Peak Reverse Voltage V 1200V C 0.026 0.034 0.66 0.86 RSM D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 V DC Reverse Voltage 1200V DC F 0.201 0.215 5.10 5.46 G 0.190 4.83 TYP. H 0.236 0.244 6.00 6.20 Average Forward Current I 2A T =163C F C I 0.086 0.094 2.18 2.39 J 0.386 0.409 9.80 10.40 T =25C, t =10ms, TYP. C p K 0.114 2.90 Peak Forward Surge Current I 27A FSM L 0.055 0.067 1.40 1.70 Half Sine Pulse M 0.063 1.60 TYP. T =25C, t =10ms, Repetitive Peak Forward C p O 0.043 0.051 1.10 1.30 I 18A FRM Current Half Sine Pulse Q 0.000 0.012 0.00 0.30 V 0.211 5.35 TYP. Power Dissipation P 50W T =25C D C Note:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7a. *OUFSOBM 4USVDUVSF PIN 1,2,4 PIN 3 Rev.3-2-12012020 1/4 MCCSEMI.COM 3SICU02120B Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Conditions Typ. Max. Units I =2A, T =25C 1.45 1.7 V F J Forward Voltage V F I =2A, T =175C 2.1 2.7 V F J V =1200V, T =25C 2 10 A R J Reverse Leakage Current I R V =1200V, T =175C 10 50 A R J Total Capacitive Charge Q V =800V 12.1 nC C R V =0V, f=1MHz 140 pF R Total capacitance C V =400V, f=1MHz 11.7 pF R V =800V, f=1MHz 9.5 pF R Capacitance Stored Energy E V =800V 3.67 J C R Curve Characteristics Fig. 1 - Typical Instantaneous Forward Characteristics Fig. 2 - Typical Reverse Leakage Characteristics 4 100 80 3 25C 60 75C 125C 2 175C 40 175C 125C 75C 1 25C 20 0 0 0 300 600 900 1200 1500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V (V) V (V) F R Rev.3-2-12012020 2/4 MCCSEMI.COM I (A) F I (A) R