SICU0460B Features Zero Reverse Recovery Current Positive Temperature Coefficient 4 Amp High-Speed Switching Moisture Sensitivity Level 1 Silicon Carbide Epoxy Meets UL 94 V-0 Flammability Rating Schottky Barrier Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant(Note 1) Suffix designates Rectifier RoHS Compliant. See ordering information) Benefits 650 Volts Temperature-Independent Performance Essentially No Switching Loss Higher Efficiency Reduced EMI. Reduction of Heat Sink Requirements Applications J Switching Power Supply H Power Factor Correction C 1 O Solar Inverter 2 4 F E I 3 Maximum Ratings M K V Operating Junction Temperature Range: -55C to +175C Q Storage Temperature Range: -55C to +175C A G Thermal Resistance: 2.5C/W Junction to Case L D B MCC Device Marking Part Number SICU04 60B SICU04 60B DIMENSIONS INCHES MM Peak Repetitive Reverse DIM NOTE V 650V MIN MAX MIN MAX RRM Voltage A 0.087 0.094 2.20 2.40 B 0.000 0.005 0.00 0.13 Surge Peak Reverse Voltage V 650V RSM C 0.026 0.034 0.66 0.86 D 0.018 0.023 0.46 0.58 E 0.256 0.264 6.50 6.70 DC Reverse Voltage V 650V DC F 0.201 0.215 5.10 5.46 G 0.190 4.83 TYP. H 0.236 0.244 6.00 6.20 T =156C Average Forward Current I 4A J F I 0.086 0.094 2.18 2.39 J 0.386 0.409 9.80 10.40 T =25C, t =10ms, C p TYP. K 0.114 2.90 Peak Forward Surge Current I 34A FSM Half Sine Pulse L 0.055 0.067 1.40 1.70 M 0.063 1.60 TYP. Repetitive Peak Forward T =25C, t =10ms, C p I O 0.043 0.051 1.10 1.30 20A FRM Current Half Sine Pulse Q 0.000 0.012 0.00 0.30 V 0.211 5.35 TYP. Power Dissipation P 60W T =25C D C Note:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7a. *OUFSOBM 4USVDUVSF PIN 1,2,4 PIN 3 Rev.3-2-12012020 1/4 MCCSEMI.COM 3SICU0460B Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Conditions Typ. Max. Units I =4A, T =25C 1.6 1.8 V F J Forward Voltage V F I =4A, T =175C 2 2.5 V F J V =650V, T =25C 2 15 A R J Reverse Leakage Current I R V =650V, T =175C 15 100 A R J Total Capacitive Charge Q V =400V 12.1 nC C R V =0V, f=1MHz 200 pF R Total capacitance C V =200V, f=1MHz 23.8 pF R V =400V, f=1MHz 20.9 pF R Capacitance Stored Energy E V =400V 1.92 J C R Curve Characteristics Fig. 1 - Typical Instantaneous Forward Characteristics Fig. 2 - Typical Reverse Leakage Characteristics 8 200 180 7 160 6 140 5 120 25C 75C 100 4 125C 25C 80 175C 75C 3 125C 60 175C 2 40 20 1 0 0 0 100 200 300 400 500 600 700 800 900 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V (V) V (V) R F Rev.3-2-12012020 2/4 MCCSEMI.COM I (A) F I (A) R