M29W128GL70ZS3F Micron

128Mb 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W128GH, M29W128GL V /WP pin protection PP Features Protects first or last block regardless of block Supply voltage protection settings V = 2.73.6V (program, erase, read) CC Software protection V = 1.653.6V (I/O buffers) CCQ Volatile protection V = 12V for fast program (optional) PPH Nonvolatile protection Asynchronous random/page read Password protection Page size: 8 words or 16 bytes Extended memory block Page access: 25, 30ns 128-word (256-byte) memory block for perma- 1 Random access: 60ns , 70, 80ns nent, secure identification Fast program commands: 32-word (64-byte) write Common flash interface buffer 64-bit security code Enhanced buffered program commands: 256-word Low power consumption: Standby and automatic Program time mode 16s per byte/word TYP Minimum 100,00 PROGRAM/ERASE cycles per Chip program time: 5s with V and 8s without PPH block V PPH RoHS compliant packages Memory organization 56-pin TSOP (N) 14mm x 20mm Uniform blocks: 128 main blocks, 128-Kbytes or 64-ball TBGA (ZA) 10mm x 13mm 64-Kwords each 64-ball FBGA (ZS) 11mm x 13mm Program/erase controller Electronic signature Embedded byte/word program algorithms Manufacturer code: 0020h Program/erase suspend and resume capability M29W128GH uniform, last block protected by Read from any block during a PROGRAM SUS- V /WP : 227Eh + 2221h + 2201h PP PEND operation M29W128GL uniform, first block protected by Read or program another block during an ERASE V /WP : 227Eh + 2221h + 2200h PP SUSPEND operation Automotive device grade temperature Unlock bypass, block erase, chip erase, write to buf- 40C to +125C (automotive grade certified) fer, enhanced buffer program commands Fast buffered/batch programming 1. The 60ns device is available upon customer Note: Fast block/chip erase request. CCMTD-1725822587-2335 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m29w 128mb.pdf - Rev. C 5/18 EN 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.128Mb 3V Embedded Parallel NOR Flash Features Part Numbering Information Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specifica- tion comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Table 1: Part Number Information Part Number Category Category Details Notes Device type M29 Operating voltage W = V = 2.7 3.6V CC Device function 128GH = 128Mb (x8/x16) page, uniform block Flash memory, highest block protected by V /WP PP 128GL = 128Mb (x8/x16) page, uniform block Flash memory, lowest block protected by V /WP PP Speed 70 = 70ns 1 60 = 60ns 1, 2 7A = 70ns 1, 3 Package N = 56-pin TSOP, 14mm x 20mm ZA = 64-ball TBGA, 10mm x 13mm, 1mm pitch ZS = 64-ball Fortified BGA, 11mm x 13mm, 1mm pitch Temperature range 1 = 0 to 70C 6 = 40C to +85C (IT) 3 = 40C to +125C (IT) Shipping options E = RoHS-compliant package, standard packing F = RoHS-compliant package, tape and reel packing Notes: 1. 80ns if V = 1.65V to V . CCQ CC 2. The 60ns device is available upon customer request. 3. Automotive qualified, available only with option 6. Qualified and characterized according to AEC Q100 and Q003 or equivalent advanced screening according to AEC Q001 and Q002 or equivalent. CCMTD-1725822587-2335 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m29w 128mb.pdf - Rev. C 5/18 EN 2012 Micron Technology, Inc. All rights reserved.