X-On Electronics has gained recognition as a prominent supplier of M29W160EB7AN6F NOR Flash across the USA, India, Europe, Australia, and various other global locations. M29W160EB7AN6F NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

M29W160EB7AN6F Micron

M29W160EB7AN6F electronic component of Micron
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Part No.M29W160EB7AN6F
Manufacturer: Micron
Category: NOR Flash
Description: NOR Flash Parallel 3V/3.3V 16M-bit 2M x 8/1M x 16 70ns Automotive 48-Pin TSOP T/R
Datasheet: M29W160EB7AN6F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
28: USD 2.2777 ea
Line Total: USD 63.78 
Availability - 0
MOQ: 28  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 28
Multiples : 1
28 : USD 2.2777
50 : USD 2.1571
100 : USD 1.9988

   
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Rad Hardened
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Program/Erase Volt Typ
Programmable
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We are delighted to provide the M29W160EB7AN6F from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the M29W160EB7AN6F and other electronic components in the NOR Flash category and beyond.

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16Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W160ET, M29W160EB Common Flash interface Features 64-bit security code Supply voltage Low power consumption: Standby and automatic V = 2.73.6V (program, erase, read) CC mode Access times 100,000 PROGRAM/ERASE cycles per block 70, 90ns Electronic signature Program time Manufacturer code: 0020h 10s per byte/word (TYP) Top device code M29W160ET: 22C4h Memory organization Bottom device code M29W160EB: 2249h 3 parameter and 31 main blocks Packages 1 boot block (top or bottom location) 48-pin TSOP (N) 12mm x 20mm Program/erase controller 48-ball TFBGA (ZA) 6mm x 8mm Embedded byte/word program algorithms 64-ball FBGA (ZS) 11mm x 13mm Erase suspend and resume capability Automotive grade parts available Read or program another block during an ERASE SUSPEND operation UNLOCK BYPASS PROGRAM COMMAND Fast buffered/batch programming Temporary block unprotect mode PDF: 09005aef84e1488c Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m29W 160e.pdf - Rev. B 06/13 EN 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.16Mb: 3V Embedded Parallel NOR Flash Features Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack- ages or speed, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Table 1: Part Number Information Part Number Category Category Details Notes Device Type M29 = Parallel Flash memory Operating Voltage W = 2.7 to 3.6V Device function 160E = 16Mb memory array Configuration T = Top boot B = Bottom boot Speed 7A = 70ns 1 70 = 70 ns 2 80 = 80ns 3 90 = 90ns 4 Package N = 48-pin TSOP, 12mm x 20mm ZA = 48-ball TFBGA, 6mm x 8mm, 0.80mm pitch ZS = 64-ball Fortified BGA, 11mm x 13mm, 1mm pitch Temperature Range 6 = 40 to 85C 3 = 40C to 125C Voltage Extension Blank = Standard option S = V extension to 2.5V of V and available only with 80ns speed class option CC,min CC Shipping Options Blank = Standard packing T = Tape and reel packing E = RoHS-compliant package, standard packing F = RoHS-compliant package, tape and reel packing Notes: 1. Device speed in conjunction with temperature range = 6 to denote automotive grade (40 to 85C) parts. 2. Device speed in conjunction with temperature range = 6 to denote industrial grade (40 to 85C) parts, or in conjunction with temperature range = 3 to denote automotive grade (40 to 125C) parts. 3. Access time, automotive device, in conjunction with temperature range = 3 and voltage extension = S. 4. Device speed in conjunction with temperature range = 6 to denote industrial grade (40 to 85C) parts. PDF: 09005aef84e1488c Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m29W 160e.pdf - Rev. B 06/13 EN 2012 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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