X-On Electronics has gained recognition as a prominent supplier of MT18HVF25672PZ-80EM1 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MT18HVF25672PZ-80EM1 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MT18HVF25672PZ-80EM1 Micron

MT18HVF25672PZ-80EM1 electronic component of Micron
MT18HVF25672PZ-80EM1 Micron
MT18HVF25672PZ-80EM1 Memory Modules
MT18HVF25672PZ-80EM1  Embedded Solutions

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Part No. MT18HVF25672PZ-80EM1
Manufacturer: Micron
Category: Memory Modules
Description: Memory Modules DDR2 2GByte RDIMM
Datasheet: MT18HVF25672PZ-80EM1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 107.2677 ea
Line Total: USD 10726.77 
Availability - 0
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 100
Multiples : 100
100 : USD 107.2677

   
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We are delighted to provide the MT18HVF25672PZ-80EM1 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT18HVF25672PZ-80EM1 and other electronic components in the Memory Modules category and beyond.

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1GB, 2GB, 4GB (x72, SR) 240-Pin DDR2 SDRAM VLP RDIMM Features DDR2 SDRAM VLP RDIMM MT18HVF12872PZ 1GB MT18HVF25672PZ 2GB MT18HVF51272PZ 4GB Figure 1: 240-Pin VLP RDIMM (ATCA Form Fac- Features tor) 240-pin, registered very low profile, dual in-line Module height: 17.9mm (0.705 in) memory module, ATCA form factor Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 1GB (128 Meg x 72), 2GB (256 Meg x 72), or 4GB (512 Meg x 72) Options Marking Supports ECC error detection and correction Parity P 1 Operating temperature V = V = 1.8V DD DDQ Commercial (0C T +70C) None A V = 1.73.6V DDSPD Package JEDEC-standard 1.8V I/O (SSTL_18-compatible) 240-pin DIMM (halogen-free) Z Differential data strobe (DQS, DQS#) option 2 Frequency/CL 4n-bit prefetch architecture 2.5ns @ CL = 5 (DDR2-800) -80E Single rank 2.5ns @ CL = 6 (DDR2-800) -800 3.0ns @ CL = 5 (DDR2-667) -667 Multiple internal device banks for concurrent operation 1. Contact Micron for industrial temperature Notes: Programmable CAS latency (CL) module offerings. 2. CL = CAS (READ) latency; registered mode Posted CAS additive latency (AL) t will add one clock cycle to CL. WRITE latency = READ latency - 1 CK Programmable burst lengths (BL): 4 or 8 Adjustable data-output drive strength 64ms, 8192-cycle refresh On-die termination (ODT) Serial presence-detect (SPD) with EEPROM Gold edge contacts Halogen-free Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83d74fdb Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 hvf18c128_256_512x72pz.pdf Rev. D 4/14 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1GB, 2GB, 4GB (x72, SR) 240-Pin DDR2 SDRAM VLP RDIMM Features Table 2: Addressing Parameter 1GB 2GB 4GB Refresh count 8K 8K 8K Row address 16K A[13:0] 16K A[13:0] 32K A[14:0] Device bank address 4 BA[1:0] 8 BA[2:0] 8 BA[2:0] Device configuration 512Mb (128 Meg x 4) 1Gb (256 Meg x 4) 2Gb (512 Meg x 4) Column address 2K A[11, 9:0] 2K A[11, 9:0] 2K A[11, 9:0] Module rank address 1 S0# 1 S0# 1 S0# Table 3: Part Numbers and Timing Parameters 1GB 1 Base device: MT47H128M4, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18HVF12872PZ-80E__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HVF12872PZ-800__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HVF12872PZ-667__ 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 2GB 1 Base device: MT47H256M4, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18HVF25672PZ-80E__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HVF25672PZ-800__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HVF25672PZ-667__ 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 5: Part Numbers and Timing Parameters 4GB 1 Base device: MT47H512M4, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18HVF51272PZ-80E__ 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HVF51272PZ-800__ 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HVF51272PZ-667__ 4GB 512 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. Data sheets for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT18HVF25672PZ-667M1. PDF: 09005aef83d74fdb Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 hvf18c128_256_512x72pz.pdf Rev. D 4/14 EN 2010 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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