MT18HVF25672PZ-80EM1 Micron

1GB, 2GB, 4GB (x72, SR) 240-Pin DDR2 SDRAM VLP RDIMM Features DDR2 SDRAM VLP RDIMM MT18HVF12872PZ 1GB MT18HVF25672PZ 2GB MT18HVF51272PZ 4GB Figure 1: 240-Pin VLP RDIMM (ATCA Form Fac- Features tor) 240-pin, registered very low profile, dual in-line Module height: 17.9mm (0.705 in) memory module, ATCA form factor Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 1GB (128 Meg x 72), 2GB (256 Meg x 72), or 4GB (512 Meg x 72) Options Marking Supports ECC error detection and correction Parity P 1 Operating temperature V = V = 1.8V DD DDQ Commercial (0C T +70C) None A V = 1.73.6V DDSPD Package JEDEC-standard 1.8V I/O (SSTL_18-compatible) 240-pin DIMM (halogen-free) Z Differential data strobe (DQS, DQS#) option 2 Frequency/CL 4n-bit prefetch architecture 2.5ns @ CL = 5 (DDR2-800) -80E Single rank 2.5ns @ CL = 6 (DDR2-800) -800 3.0ns @ CL = 5 (DDR2-667) -667 Multiple internal device banks for concurrent operation 1. Contact Micron for industrial temperature Notes: Programmable CAS latency (CL) module offerings. 2. CL = CAS (READ) latency; registered mode Posted CAS additive latency (AL) t will add one clock cycle to CL. WRITE latency = READ latency - 1 CK Programmable burst lengths (BL): 4 or 8 Adjustable data-output drive strength 64ms, 8192-cycle refresh On-die termination (ODT) Serial presence-detect (SPD) with EEPROM Gold edge contacts Halogen-free Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83d74fdb Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 hvf18c128_256_512x72pz.pdf Rev. D 4/14 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1GB, 2GB, 4GB (x72, SR) 240-Pin DDR2 SDRAM VLP RDIMM Features Table 2: Addressing Parameter 1GB 2GB 4GB Refresh count 8K 8K 8K Row address 16K A[13:0] 16K A[13:0] 32K A[14:0] Device bank address 4 BA[1:0] 8 BA[2:0] 8 BA[2:0] Device configuration 512Mb (128 Meg x 4) 1Gb (256 Meg x 4) 2Gb (512 Meg x 4) Column address 2K A[11, 9:0] 2K A[11, 9:0] 2K A[11, 9:0] Module rank address 1 S0# 1 S0# 1 S0# Table 3: Part Numbers and Timing Parameters 1GB 1 Base device: MT47H128M4, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18HVF12872PZ-80E__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HVF12872PZ-800__ 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HVF12872PZ-667__ 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 2GB 1 Base device: MT47H256M4, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18HVF25672PZ-80E__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HVF25672PZ-800__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HVF25672PZ-667__ 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 5: Part Numbers and Timing Parameters 4GB 1 Base device: MT47H512M4, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18HVF51272PZ-80E__ 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT18HVF51272PZ-800__ 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT18HVF51272PZ-667__ 4GB 512 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. Data sheets for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT18HVF25672PZ-667M1. PDF: 09005aef83d74fdb Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 hvf18c128_256_512x72pz.pdf Rev. D 4/14 EN 2010 Micron Technology, Inc. All rights reserved.