2GB, 4GB (x72, ECC, DR) 244-Pin DDR2 VLP Mini-RDIMM
Features
DDR2 SDRAM VLP Mini-RDIMM
MT18HVS25672PKZ 2GB
MT18HVS51272PKZ 4GB
Figure 1: 244-Pin VLP Mini-RDIMM
Features
Module height: 18.2mm (0.72 in)
244-pin, very low profile mini-registered dual in-line
memory module (VLP Mini-RDIMM)
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
2GB (256 Meg x 72) or 4GB (512 Meg x 72)
Supports ECC error detection and correction
Options Marking
Dual-rank, TwinDie (2COB) DRAM devices
Parity P
V = V = 1.8V
DD DDQ
Operating temperature
V = 1.73.6V
DDSPD
Commercial (0C T +70C) None
A
1
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Industrial (-40C T +85C) I
A
Package
Differential data strobe (DQS, DQS#) option
244-pin DIMM (halogen-free) Z
4n-bit prefetch architecture
2
Frequency/CL
Multiple internal device banks for concurrent
3
2.5ns @ CL = 5 (DDR2-800) -80E
operation
2.5ns @ CL = 6 (DDR2-800) -800
Programmable CAS# latency (CL)
3.0ns @ CL = 5 (DDR2-667) -667
Posted CAS# additive latency (AL)
Notes: 1. Contact Micron for industrial temperature
t
WRITE latency = READ latency - 1 CK
module offerings.
Programmable burst lengths (BL): 4 or 8
2. CL = CAS (READ) latency; registered mode
Adjustable data-output drive strength will add one clock cycle to CL.
3. Not available in 4GB module density.
64ms, 8192-cycle refresh
On-die termination (ODT)
Serial presence-detect (SPD) with EEPROM
Gold edge contacts
Halogen-free
Table 1: Key Timing Parameters
Data Rate (MT/s) t t t
Speed Industry RCD RP RC
Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns)
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300 667 553 400 15 15 55
-53E PC2-4200 553 400 15 15 55
-40E PC2-3200 400 400 15 15 55
PDF: 09005aef83d94997 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
hvs18c256_512x72pkz.pdf - Rev. E 4/14 EN 2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.2GB, 4GB (x72, ECC, DR) 244-Pin DDR2 VLP Mini-RDIMM
Features
Table 2: Addressing
Parameter 2GB 4GB
Refresh count 8K 8K
Row address 16K A[13:0] 32K A[14:0]
Device bank address 8 BA[2:0] 8 BA[2:0]
Device configuration 2Gb TwinDie (256 Meg x 8) 4Gb TwinDie (512 Meg x 8)
Column address 1K A[9:0] 1K A[9:0]
Module rank address 2 S#[1:0] 2 S#[1:0]
Table 3: Part Numbers and Timing Parameters 2GB
1
Base device: MT47H256M8, 2Gb TwinDie DDR2 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT18HVS25672PK(I)Z-80E__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT18HVS25672PK(I)Z-800__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT18HVS25672PK(I)Z-667__ 2GB 256 Meg x 72 5.3 GB/s 3.0ns/800 MT/s 5-5-5
Table 4: Part Numbers and Timing Parameters 4GB
1
Base device: MT47H512M8, 4Gb TwinDie DDR2 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT18HVS51272PK(I)Z-800__ 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT18HVS51272PK(I)Z-667__ 4GB 512 Meg x 72 5.3 GB/s 3.0ns/800 MT/s 5-5-5
Notes: 1. Data sheets for the base device can be found on Microns Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MT18HVS25672PKZ-80EM1.
PDF: 09005aef83d94997 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
hvs18c256_512x72pkz.pdf - Rev. E 4/14 EN 2010 Micron Technology, Inc. All rights reserved.