MT18KDF1G72PDZ-1G4E1 Micron

4GB, 8GB (x72, ECC, DR) 240-Pin 1.35V DDR3L VLP RDIMM Features 1.35V DDR3L SDRAM VLP RDIMM MT18KDF51272PDZ 4GB MT18KDF1G72PDZ 8GB Figure 1: 240-Pin RDIMM (MO-269 R/C L) Features DDR3L functionality and operations supported as Module height: 18.75mm (0.738in) defined in the component data sheet 240-pin, registered dual in-line, very-low-profile memory module (VLP RDIMM) Fast data transfer rates: PC3-12800, PC3-10600, PC3-8500, or PC3-6400 Options Marking 1 Operating temperature 4GB (512 Meg x 72), 8GB (1 Gig x 72) Commercial (0C T +70C) None A V = 1.35V (1.2831.45V) DD Industrial (40C T +85C) T A V = 1.5V (1.4251.575V) DD Package Backward-compatible to V = 1.5V 0.075V DD 240-pin DIMM (halogen-free) Z V = 3.03.6V DDSPD Frequency/CAS latency Supports ECC error detection and correction 1.25ns CL = 11 (DDR3-1600) -1G6 1.5ns CL = 9 (DDR3-1333) -1G4 Nominal and dynamic on-die termination (ODT) for 1.87ns CL = 7 (DDR3-1066) -1G1 data, strobe, and mask signals Dual-rank 1. Contact Micron for industrial temperature Note: 2 module offerings. On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 11 CL = 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef847d79ed Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 kdf18c512 1Gx72pdz - Rev. G 9/14 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.4GB, 8GB (x72, ECC, DR) 240-Pin 1.35V DDR3L VLP RDIMM Features Table 2: Addressing Parameter 4GB 8GB Refresh count 8K 8K Row address 32K A 14:0 64K A 15:0 Device bank address 8 BA 2:0 8 BA 2:0 Device configuration 2Gb (256 x 8) 4Gb (512 x 8) Column address 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT41K256M8, 1.35V 2Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18KDF51272PDZ-1G6 4GB 512 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT18KDF51272PTZ-1G6 4GB 512 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT18KDF51272PDZ-1G4 4GB 512 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT18KDF51272PDZ-1G1 4GB 512 Meg x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Table 4: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT41K512M8, 1.35V 4Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18KDF1G72PDZ-1G6 8GB 1 Gig x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT18KDF1G72PDZ-1G4 8GB 1 Gig x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT18KDF1G72PDZ-1G1 8GB 1 Gig x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT18KDF1G72PDZ-1G4E1. PDF: 09005aef847d79ed Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 kdf18c512 1Gx72pdz - Rev. G 9/14 EN 2011 Micron Technology, Inc. All rights reserved.