4GB, 8GB (x72, ECC, DR) 240-Pin DDR3L UDIMM Features 1.35V DDR3L SDRAM UDIMM MT18KSF51272AZ 4GB MT18KSF1G72AZ 8GB Figure 1: 240-Pin UDIMM (MO-269 R/C E3) Features Module height: 30.0mm (1.181in) DDR3L functionality and operations supported as defined in the component data sheet 240-pin, unbuffered dual in-line memory module (UDIMM) Fast data transfer rates: PC3-12800, PC3-10600 4GB (512 Meg x 72), 8GB (1 Gig x72) Figure 2: 240-Pin UDIMM (MO-269 R/C E3) V = 1.35V (1.2351.45V) DD V = 1.5V (1.4251.575V) Module height: 30.0mm (1.181in) DD Backward compatible to V = 1.5V 0.075V DD V = 3.03.6V DDSPD Supports ECC error detection and correction Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Options Marking Dual rank Operating temperature 2 On-board I C temperature sensor with integrated Commercial (0C T +70C) None A serial presence-detect (SPD) EEPROM Package 8 internal device banks 240-pin DIMM (halogen-free) Z Fixed burst chop (BC) of 4 and burst length (BL) of 8 Frequency/CAS latency via the mode register set (MRS) 1.25ns CL = 11 (DDR3-1600) -1G6 Selectable BC4 or BL8 on-the-fly (OTF) 1.5ns CL = 9 (DDR3-1333) -1G4 Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 11 CL = 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef83cd9e75 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 ksf18c512 1gx72az.pdf - Rev. J 10/15 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.4GB, 8GB (x72, ECC, DR) 240-Pin DDR3L UDIMM Features Table 2: Addressing Parameter 4GB 8GB Refresh count 8K 8K Row address 32K A 14:0 64K A 15:0 Device bank address 8 BA 2:0 8 BA 2:0 Device configuration 2Gb (256 Meg x 8) 4Gb (512 Meg x8 Column address 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT41K256M8, 1.35V 2Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18KSF51272AZ-1G6 4GB 512 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT18KSF51272AZ-1G4 4GB 512 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 Table 4: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT41K512M8, 1.35V 4Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18KSF1G72AZ-1G6 8GB 1 Gig x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT18KSF1G72AZ-1G4 8GB 1 Gig x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 Notes: 1. The data sheet for the base device can be found on Microns web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT18KSF1G72AZ-1G6P1. PDF: 09005aef83cd9e75 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 ksf18c512 1gx72az.pdf - Rev. J 10/15 EN 2009 Micron Technology, Inc. All rights reserved.