X-On Electronics has gained recognition as a prominent supplier of MT18KSF1G72HZ-1G4D1 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MT18KSF1G72HZ-1G4D1 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MT18KSF1G72HZ-1G4D1 Micron

MT18KSF1G72HZ-1G4D1 electronic component of Micron
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See Product Specifications
Part No.MT18KSF1G72HZ-1G4D1
Manufacturer: Micron
Category: Memory Modules
Description: DRAM Module DDR3L SDRAM 8Gbyte 204SODIMM
Datasheet: MT18KSF1G72HZ-1G4D1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the MT18KSF1G72HZ-1G4D1 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT18KSF1G72HZ-1G4D1 and other electronic components in the Memory Modules category and beyond.

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4GB, 8GB (x72, ECC, DR) 204-Pin DDR3L SODIMM Features 1.35V DDR3L SDRAM SODIMM MT18KSF51272HZ 4GB MT18KSF1G72HZ 8GB Figure 1: 204-Pin SODIMM Features (MO-268 R/C D1) DDR3L functionality and operations supported as defined in the component data sheet Module height: 30mm (1.181in) 204-pin, small outline dual in-line memory module (SODIMM) with ECC Fast data transfer rates: PC3-12800, PC3-10600 4GB (512 Meg x 72), 8GB (1 Gig x 72) V = 1.35V (1.2831.45V) DD V = 1.5V (1.4251.575V) DD Backward compatible to V = 1.5V 0.075V DD V = 3.03.6V DDSPD Supports ECC error detection and correction Nominal and dynamic on-die termination (ODT) for Options Marking data, strobe, and mask signals Operating temperature Dual-rank Commercial (0C T +70C) None A 2 On-board I C temperature sensor with integrated Package serial presence-detect (SPD) EEPROM 204-pin DIMM (halogen-free) Z Frequency/CAS latency Fixed burst chop (BC) of 4 and burst length (BL) of 8 1.25ns CL = 11 (DDR3-1600) -1G6 via the mode register set (MRS) 1.5ns CL = 9 (DDR3-1333) -1G4 Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 11 CL = 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef84567057 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 ksf18c512 1gx72hz.pdf Rev. I 8/15 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.4GB, 8GB (x72, ECC, DR) 204-Pin DDR3L SODIMM Features Table 2: Addressing Parameter 4GB 8GB Refresh count 8K 8K Row address 32K A 14:0 64K A 15:0 Device bank address 8 BA 2:0 8 BA 2:0 Device configuration 2Gb (256 Meg x 8) 4Gb (512 Meg x 8) Column address 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT41K256M8, 2Gb 1.35V DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18KSF51272HZ-1G6 4GB 512 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT18KSF51272HZ-1G4 4GB 512 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 Table 4: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT41K512M8, 4Gb 1.35V DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18KSF1G72HZ-1G6 8GB 1 Gig x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT18KSF1G72HZ-1G4 8GB 1 Gig x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 Notes: 1. The data sheet for the base device can be found on Microns web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT18KSF1G72HZ-1G6P1. PDF: 09005aef84567057 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 ksf18c512 1gx72hz.pdf Rev. I 8/15 EN 2011 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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