X-On Electronics has gained recognition as a prominent supplier of MT18RTF25672FDZ-667H1D6 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MT18RTF25672FDZ-667H1D6 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MT18RTF25672FDZ-667H1D6 Micron

MT18RTF25672FDZ-667H1D6 electronic component of Micron
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Part No.MT18RTF25672FDZ-667H1D6
Manufacturer: Micron
Category: Memory Modules
Description: DRAM Module DDR2 SDRAM 2Gbyte 240FBDIMM
Datasheet: MT18RTF25672FDZ-667H1D6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 154.8678 ea
Line Total: USD 154.87 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 154.8678
10 : USD 131.1919
50 : USD 123.9012
100 : USD 74.3365

   
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We are delighted to provide the MT18RTF25672FDZ-667H1D6 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT18RTF25672FDZ-667H1D6 and other electronic components in the Memory Modules category and beyond.

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2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM Features 1.55V DDR2 SDRAM FBDIMM MT18RTF25672FDZ 2GB Information in the 1.8V DDR2 FBDIMM data sheet is Features directly applicable to this 1.55V DDR2 FBDIMM, ex- 240-pin, fully buffered DIMM (FBDIMM) cept where stated otherwise in this data sheet. Very low-power DDR2 operation Figure 1: 240-Pin FBDIMM (MO-256 R/C B) Component configuration: 256 Meg x 8 1.5V V 1.9V for DDR2 SDRAM DD Module height: 30.35mm (1.19in) 1.5V V 1.9V for advanced memory buffer DD (AMB) DRAM I/O V = 1.55V DD Backward compatible with systems designed for the standard (1.8V) FBDIMM Dual rank Options Marking Halogen-free Package 240-pin DIMM (halogen-free) Z Functionality 1 Frequency/CL This 1.55V FBDIMM consumes less power than a stand- 3.0ns @ CL = 5 (DDR2-667) -667 ard 1.8V FBDIMM. However, it has the same timing Note: 1. CL = CAS (READ) latency. and operating parameters as a standard FBDIMM. This enables backward compatibility with systems de- signed for use with standard FBDIMMs. Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 PDF: 09005aef84281416 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 rtf18c256x72fdz.pdf - Rev. A 9/10 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM Features Table 2: Addressing Parameter 2GB Refresh count 8K Device bank address 8 BA[2:0] Device page size per bank 1KB Device configuration 1Gb (256 Meg x 8) Row address 16K A[13:0] Column address 1K A[9:0] Module rank address 2 S#[1:0] Table 3: Part Numbers and Timing Parameters 2GB 1 Base device: MT47R128M8, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles Link 2 t t Part Number Density Configuration Bandwidth Data Rate (CL - RCD - RP) Transfer Rate MT18RTF25672FDZ-667__ 2GB 256 Meg x 72 PC2-5300 3.0ns/667 MT/s 5-5-5 4.0 GT/s 1. Data sheets for the base devices can be found on Microns Web site. Notes: 2. All part numbers end with a four-place code (not shown) that designates component, AMB vendor, and PCB revisions. Consult factory for current revision codes. Example: MT18RTF25672FDZ-667H1D6. PDF: 09005aef84281416 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 rtf18c256x72fdz.pdf - Rev. A 9/10 EN 2010 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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