512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM RDIMM MT9HTF6472PZ 512MB MT9HTF12872PZ 1GB MT9HTF25672PZ 2GB Figure 1: 240-Pin RDIMM (MO-237 R/C F) Features 240-pin, registered dual in-line memory module Module height: 30mm (1.181in) Fast data transfer rates: PC2-6400, PC2-5300, PC2-4200, or PC2-3200 512MB (64 Meg x 72), 1GB (128 Meg x 72), 2GB (256 Meg x 72) Supports ECC error detection and correction V = V = 1.8V DD DDQ Options Marking V = 1.73.6V DDSPD Parity P JEDEC-standard 1.8V I/O (SSTL 18-compatible) Operating temperature Differential data strobe (DQS, DQS ) option Commercial (0C T +70C) None A 4n-bit prefetch architecture 1 Industrial (40C T +85C) I A Multiple internal device banks for concurrent Package operation 240-pin DIMM (halogen-free) Z 2 Frequency/CL Programmable CAS latency (CL) 2.5ns CL = 5 (DDR2-800) -80E Posted CAS additive latency (AL) 2.5ns CL = 6 (DDR2-800) -800 t WRITE latency = READ latency - 1 CK 3.0ns CL = 5 (DDR2-667) -667 Programmable burst lengths (BL): 4 or 8 1. Contact Micron for industrial temperature Notes: Adjustable data-output drive strength module offerings. 64ms, 8192-cycle refresh 2. CL = CAS (READ) latency registered mode On-die termination (ODT) will add one clock cycle to CL. Serial presence-detect (SPD) with EEPROM Single rank Gold edge contacts Halogen-free Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83c641c6 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf9c64 128 256x72pz.pdf - Rev. E 4/14 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM Features Table 2: Addressing Parameter 512MB 1GB 2GB Refresh count 8K 8K 8K Row address 16K A 13:0 16K A 13:0 32K A 14:0 Device bank address 4 BA 1:0 8 BA 2:0 8 BA 2:0 Device configuration 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) Column address 1K A 9:0 1K A 9:0 1K A 9:0 Module rank address 1 S0 1 S0 1 S0 Table 3: Part Numbers and Timing Parameters 512MB 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9HTF6472P(I)Z-80E 512MB 64 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 5-5-5 MT9HTF6472P(I)Z-800 512MB 64 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 6-6-6 MT9HTF6472P(I)Z-667 512MB 64 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 1GB 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9HTF12872P(I)Z-80E 1GB 128 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 5-5-5 MT9HTF12872P(I)Z-800 1GB 128 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 6-6-6 MT9HTF12872P(I)Z-667 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 5: Part Numbers and Timing Parameters 2GB 1 Base device: MT47H256M8, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9HTF25672P(I)Z-80E 2GB 256 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 5-5-5 MT9HTF25672P(I)Z-800 2GB 256 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 6-6-6 MT9HTF25672P(I)Z-667 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. Data sheets for the base device can be found on Microns web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT9HTF12872PZ-80EM1. PDF: 09005aef83c641c6 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf9c64 128 256x72pz.pdf - Rev. E 4/14 EN 2009 Micron Technology, Inc. All rights reserved.