X-On Electronics has gained recognition as a prominent supplier of MT16HTF25664AZ-667H1 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MT16HTF25664AZ-667H1 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MT16HTF25664AZ-667H1 Micron

MT16HTF25664AZ-667H1 electronic component of Micron
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See Product Specifications
Part No.MT16HTF25664AZ-667H1
Manufacturer: Micron
Category: Memory Modules
Description: DRAM Module DDR2 SDRAM 2Gbyte 240UDIMM
Datasheet: MT16HTF25664AZ-667H1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 33.5522 ea
Line Total: USD 33.55 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 33.5522
25 : USD 17.0478
100 : USD 11.9322
500 : USD 11.4786
1000 : USD 11.0628
2500 : USD 10.6596

   
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We are delighted to provide the MT16HTF25664AZ-667H1 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT16HTF25664AZ-667H1 and other electronic components in the Memory Modules category and beyond.

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1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM UDIMM MT16HTF12864AZ 1GB MT16HTF25664AZ 2GB MT16HTF51264AZ 4GB Figure 1: 240-Pin UDIMM (MO-237 R/C E) Features Module height: 30mm (1.18in) 240-pin, unbuffered dual in-line memory module Fast data transfer rates: PC2-8500, PC2-6400, PC2-5300, PC2-4200, or PC2-3200 1GB (128 Meg x 64), 2GB (256 Meg x 64), 4GB (512 Meg x 64) V = V = 1.8V DD DDQ Options Marking V = 1.73.6V DDSPD Operating temperature JEDEC-standard 1.8V I/O (SSTL 18-compatible) Commercial (0C T +70C) None A Differential data strobe (DQS, DQS ) option 1 Industrial (40C T +85C) I A 4n-bit prefetch architecture Package 240-pin DIMM (halogen-free) Z Multiple internal device banks for concurrent 2 Frequency/CL operation 3 1.875ns CL = 7 (DDR2-1066) -1GA Programmable CAS latency (CL) 2.5ns CL = 5 (DDR2-800) -80E Posted CAS additive latency (AL) 2.5ns CL = 6 (DDR2-800) -800 t WRITE latency = READ latency - 1 CK 3ns CL = 5 (DDR2-667) -667 Programmable burst lengths (BL): 4 or 8 1. Contact Micron for industrial temperature Notes: Adjustable data-output drive strength module offerings. 64ms, 8192-cycle refresh 2. CL = CAS (READ) latency. On-die termination (ODT) 3. Not recommended for new designs. Serial presence-detect (SPD) with EEPROM Gold edge contacts Dual rank Halogen-free Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 7 CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125 -80E PC2-6400 800 800 533 400 12.5 12.5 57.5 -800 PC2-6400 800 667 533 400 15 15 60 -667 PC2-5300 667 553 400 15 15 60 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83b82bc1 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf16c128 256 512x64az Rev. D 11/11 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 SDRAM UDIMM Features Table 2: Addressing Parameter 1GB 2GB 4GB Refresh count 8K 8K 8K Row address 16K A 13:0 16K A 13:0 32K A 14:0 Device bank address 4 BA 1:0 8 BA 2:0 8 BA 2:0 Device configuration 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) Column address 1K A 9:0 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16HTF12864A(I)Z-1GA 1GB 128 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7 MT16HTF12864A(I)Z-80E 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT16HTF12864A(I)Z-800 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTF12864A(I)Z-667 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16HTF25664A(I)Z-1GA 2GB 256 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7 MT16HTF25664A(I)Z-80E 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT16HTF25664A(I)Z-800 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTF25664A(I)Z-667 2GB 256 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 5: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT47H256M8, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16HTF51264A(I)Z-1GA 4GB 512 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7 MT16HTF51264A(I)Z-80E 4GB 512 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT16HTF51264A(I)Z-800 4GB 512 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTF51264A(I)Z-667 4GB 512 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16HTF51264AZ-80EH1. PDF: 09005aef83b82bc1 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf16c128 256 512x64az Rev. D 11/11 EN 2009 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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