X-On Electronics has gained recognition as a prominent supplier of MT16HTF25664HZ-667H1 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MT16HTF25664HZ-667H1 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MT16HTF25664HZ-667H1 Micron

MT16HTF25664HZ-667H1 electronic component of Micron
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Part No.MT16HTF25664HZ-667H1
Manufacturer: Micron
Category: Memory Modules
Description: MODULE DDR2 SDRAM 2GB 200SODIMM
Datasheet: MT16HTF25664HZ-667H1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 100
Multiples : 100
100 : USD 99.3726
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We are delighted to provide the MT16HTF25664HZ-667H1 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT16HTF25664HZ-667H1 and other electronic components in the Memory Modules category and beyond.

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1GB, 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTF12864HZ 1GB MT16HTF25664HZ 2GB MT16HTF51264HZ 4GB Figure 1: 200-Pin SODIMM (MO-224 R/C E) Features Module Height: 30mm (1.181 in.) 200-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 1GB (128 Meg x 64), 2GB (256 Meg x 64) or 4GB (512 Meg x 64) V = V = 1.8V DD DDQ V = 1.73.6V DDSPD JEDEC-standard 1.8V I/O (SSTL 18-compatible) Differential data strobe (DQS, DQS ) option Options Marking 4n-bit prefetch architecture Operating temperature Multiple internal device banks for concurrent Commercial (0C T +70C) None A operation 1 Industrial (40C T +85C) I A Programmable CAS latency (CL) Package Posted CAS additive latency (AL) 200-pin DIMM (halogen-free) Z t 2 WRITE latency = READ latency - 1 CK Frequency/CL Programmable burst lengths (BL): 4 or 8 1.87ns CL = 7 (DDR2-1066) -1GA 2.5ns CL = 5 (DDR2-800) -80E Adjustable data-output drive strength 2.5ns CL = 6 (DDR2-800) -800 64ms, 8192-cycle refresh 3ns CL = 5 (DDR2-667) -667 On-die termination (ODT) Notes: 1. Contact Micron for industrial temperature Halogen-free module offerings. Serial presence detect (SPD) with EEPROM 2. CL = CAS (READ) latency. Gold edge contacts 3. Not recommended for new designs. Dual rank Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 7 CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125 -80E PC2-6400 800 800 533 400 12.5 12.5 57.5 -800 PC2-6400 800 667 533 400 15 15 60 -667 PC2-5300 667 553 400 15 15 60 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef8339ef97 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf16c128 256 512x64hz.pdf - Rev. D 4/14 EN 2008 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1GB, 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Features Table 2: Addressing Parameter 1GB 2GB 4GB Refresh count 8K 8K 8K Row address 16K A 13:0 16K A 13:0 32K A 14:0 Device bank address 4 BA 1:0 8 BA 2:0 8 BA 2:0 Device configuration 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) Column address 1K A 9:0 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16HTF12864H(I)Z-80E 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT16HTF12864H(I)Z-800 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTF12864H(I)Z-667 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16HTF25664H(I)Z-1GA 2GB 256 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 MT16HTF25664H(I)Z-80E 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT16HTF25664H(I)Z-800 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTF25664H(I)Z-667 2GB 256 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 5: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT47H256M8, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16HTF51264H(I)Z-1GA 4GB 512 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 MT16HTF51264H(I)Z-80E 4GB 512 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT16HTF51264H(I)Z-800 4GB 512Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTF51264H(I)Z-667 4GB 512 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16HTF25664HZ-80EM1. PDF: 09005aef8339ef97 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf16c128 256 512x64hz.pdf - Rev. D 4/14 EN 2008 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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