4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM
Features
1.35V DDR3L SDRAM SODIMM
MT16KTF51264HZ 4GB
MT16KTF1G64HZ 8GB
Figure 1: 204-Pin SODIMM (MO-268 R/C-F,
Features
R/C-F3)
DDR3L functionality and operations supported as
Module height: 30mm (1.181in)
defined in the component data sheet
204-pin, small outline dual in-line memory module
(SODIMM)
Fast data transfer rates: PC3-14900, PC3-12800, or
PC3-10600
4GB (512 Meg x 64), 8GB (1 Gig x 64)
V = 1.35V (1.283V1.45V)
DD
V = 1.5V (1.4251.575V)
DD
Backward compatible to V = 1.5V 0.075V
DD
V = 3.03.6V
DDSPD
Options Marking
Nominal and dynamic on-die termination (ODT) for
Operating temperature
data, strobe, and mask signals
Commercial (0C T +70C) None
A
Dual rank
Package
Fixed burst chop (BC) of 4 and burst length (BL) of 8 204-pin DIMM (halogen-free) Z
via the mode register set (MRS) Frequency/CAS latency
2
1.07ns @ CL = 13 (DDR3-1866) -1G9
On-board I C serial presence-detect (SPD) EEPROM
1.25ns @ CL = 11 (DDR3-1600) -1G6
Selectable BC4 or BL8 on-the-fly (OTF)
1.5ns @ CL = 9 (DDR3-1333) -1G4
Gold edge contacts
Halogen-free
Fly-by topology
Terminated control, command, and address bus
Table 1: Key Timing Parameters
Data Rate (MT/s)
t t t
Speed Industry CL = CL = CL = RCD RP RC
Grade Nomenclature 13 11 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns)
-1G9 PC3-14900 1866 1600 1333 1333 1066 1066 800 667 13.125 13.125 47.125
-1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125
-1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125
-1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625
-1G0 PC3-8500 1066 800 667 15 15 52.5
-80B PC3-6400 800 667 15 15 52.5
PDF: 09005aef846206a0 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
ktf16c512_1gx64hz.pdf - Rev. K 7/15 EN 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM
Features
Table 2: Addressing
Parameter 4GB 8GB
Refresh count 8K 8K
Row address 32K A[14:0] 64K A[15:0]
Device bank address 8 BA[2:0] 8 BA[2:0]
Device configuration 2Gb (256 Meg x 8) 4Gb (512 Meg x8)
Column address 1K A[9:0] 1K A[9:0]
Module rank address 2 S#[1:0] 2 S#[1:0]
Table 3: Part Numbers and Timing Parameters 4GB Modules
1
Base device: MT41K256M8, 2Gb 1.35V DDR3L SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT16KTF51264HZ-1G6__ 4GB 512 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11
MT16KTF51264HZ-1G4__ 4GB 512 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9
Table 4: Part Numbers and Timing Parameters 8GB Modules
1
Base device: MT41K512M8, 4Gb 1.35V DDR3L SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT16KTF1G64HZ-1G9__ 8GB 1 Gig x 64 14.9 GB/s 1.07ns/1866 MT/s 13-13-13
MT16KTF1G64HZ-1G6__ 8GB 1 Gig x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11
MT16KTF1G64HZ-1G4__ 8GB 1 Gig x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9
Notes: 1. The data sheet for the base device can be found on Microns web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MT16KTF1G64HZ-1G9N1.
PDF: 09005aef846206a0 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
ktf16c512_1gx64hz.pdf - Rev. K 7/15 EN 2011 Micron Technology, Inc. All rights reserved.