1GB, 2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT18HTF12872FD 1GB MT18HTF25672FD 2GB Figure 1: 240-Pin FBDIMM (MO-256 R/C B) Features Module height: 30.35mm (1.19in) 240-pin, DDR2 fully buffered dual in-line memory module (FBDIMM) Fast data transfer rates: PC2-4200, PC2-5300, or PC2-6400 1GB (128 Meg x 72), 2GB (256 Meg x 72) 3.2 Gb/s, 4 Gb/s, or 4.8 Gb/s link transfer rates High-speed, 1.5V differential, point-to-point link be- Options Marking tween the host controller and advanced memory Package buffer (AMB) 240-pin DIMM (Pb-free) Y Fault-tolerant can work around a bad bit lane in Frequency/CAS latency each direction 2.5ns CL = 5 (DDR2-800) -80E 3.0ns CL = 5 (DDR2-667) -667 High-density scaling with up to eight FBDIMM devi- 1 3.75ns CL = 4 (DDR2-533) -53E cess per channel SMBus interface to AMB for configuration register Note: 1. Not recommended for new designs. access In-band and out-of-band command access Deterministic protocol Enables memory controller to optimize DRAM ac- cesses for maximum performance Delivers precise control and repeatable memory behavior Automatic DDR2 SDRAM bus and channel calibra- tion Transmitter de-emphasis to reduce ISI MBIST and IBIST test functions Transparent mode for DRAM test support V = V = 1.8V for DRAM DD DDQ V = 0.9V SDRAM command/address termination REF V = 1.5V for AMB CC V = 33.6V for AMB and EEPROM DDSPD Serial presence-detect (SPD) with EEPROM Gold edge contacts Dual rank Supports 95C operation with 2X refresh PDF: 09005aef81a2f237 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf18c128 256x72fdy.pdf - Rev. D 12/09 EN 2005 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1GB, 2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM Features Table 1: Key Timing Parameters Data Rate (MT/s) Speed t t t Grade Industry Nomenclature CL = 5 CL = 4 CL = 3 RCD (ns) RP (ns) RC (ns) -80E PC2-6400 800 533 12.5 12.5 55 -667 PC2-5300 667 533 400 15 15 55 -53E PC2-4200 533 400 15 15 55 Table 2: Addressing Parameter 1GB 2GB Refresh count 8K 8K Device bank address 4 BA 1:0 8 BA 2:0 Device page size per bank 1KB 1KB Device configuration 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) Row address 16K A 13:0 16K A 13:0 Column address 2K A 9:0 2K A 9:0 Module rank address 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 1GB 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles Link Transfer 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) Rate MT18HTF12872FDY-80E 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 4.8 GT/s MT18HTF12872FDY-667 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 4.0 GT/s MT18HTF12872FDY-53E 1GB 128 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4 3.2 GT/s Table 4: Part Numbers and Timing Parameters 2GB 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles Link Transfer 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) Rate MT18HTF25672FDY-80E 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 4.8 GT/s MT18HTF25672FDY-667 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 4.0 GT/s MT18HTF25672FDY-53E 2GB 256 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4 3.2 GT/s 1. Data sheets for the base devices can be found on Microns Web page. Notes: 2. All part numbers end with a four-place code (not shown) that designates component, PCB, and AMB revi- sions. Consult factory for current revision codes. Example: MT18HTF25672FDY-667E1D4. PDF: 09005aef81a2f237 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf18c128 256x72fdy.pdf - Rev. D 12/09 EN 2005 Micron Technology, Inc. All rights reserved.