1GB (x72, ECC, SR) 240-Pin DDR2 SDRAM VLP RDIMM Features DDR2 VLP Registered DIMM (RDIMM) MT18HVF12872(P) 1GB For component data sheets, refer to Micron s Web site: www.micron.com Figure 1: 240-Pin DIMM (ATCA Form Factor) Features Fits with ATCA form factor PCB height: 17.9mm (0.70in) 240-pin, very low profile registered dual in-line memory module (VLP RDIMM) Fast data transfer rates: PC2-3200, PC2-4200, or PC2-5300 1GB (128 Meg x 72) Options Marking Supports ECC error detection and correction Parity P VDD = VDDQ = +1.8V 1 Operating temperature VDDSPD = +1.7V to +3.6V Commercial (0C T +70C) None A JEDEC-standard 1.8V I/O (SSTL 18-compatible) Industrial (40C T +85C) I A Differential data strobe (DQS, DQS ) option Package 4n-bit prefetch architecture 240-pin DIMM (Pb-free) Y Single rank 2 Frequency/CAS latency Multiple internal device banks for concurrent 3.0ns CL = 5 (DDR2-667) -667 operation 3.75ns CL = 4 (DDR2-533) -53E Programmable CAS latency (CL) 5.0ns CL = 3 (DDR2-400) -40E Posted CAS additive latency (AL) PCB height t WRITE latency = READ latency - 1 CK 17.9mm (0.70in) Programmable burst lengths: 4 or 8 Adjustable data-output drive strength Notes: 1. Contact Micron for industrial temperature 64ms, 8,192-cycle refresh module offerings. On-die termination (ODT) 2. CL = CAS (READ) latency registered mode Serial presence-detect (SPD) with EEPROM will add one clock cycle to CL. Gold edge contacts Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed RCD RP RC Grade Industry Nomenclature CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -667 PC2-5300 667 533 400 15 15 55 -53E PC2-4200 533 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef82255aba/Source: 09005aef81c753af Micron Technology, Inc., reserves the right to change products or specifications without notice. HVF18C128x72.fm - Rev. C 3/07 EN 1 2003 Micron Technology, Inc. All rights reserved. 1GB (x72, ECC, SR) 240-Pin DDR2 SDRAM VLP RDIMM Features Table 2: Addressing 1GB 8K Refresh count Row address 16K (A0A13) Device bank address 4 (BA0, BA1) Device page size per bank 1KB Device configuration 512Mb (128 Meg x 4) 2K (A0A9, A11) Column address Module rank address 1 (S0 ) Table 3: Part Numbers and Timing Parameters 1GB Modules 1 Base Device: MT47H128M4 , 512Mb DDR2 SDRAM Module Module Memory Clock/ Latency 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18HVF12872(P)Y-667 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 1GB 128 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4 MT18HVF12872(P)Y-53E MT18HVF12872(P)Y-40E 1GB 128 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3 Notes: 1. Data sheets for the base devices can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT18HVF12872(P)Y-667C2 PDF: 09005aef82255aba/Source: 09005aef81c753af Micron Technology, Inc., reserves the right to change products or specifications without notice. HVF18C128x72.fm - Rev. C 3/07 EN 2 2003 Micron Technology, Inc. All rights reserved.