X-On Electronics has gained recognition as a prominent supplier of MT16KTF51264HZ-1G6K1 memory modules across the USA, India, Europe, Australia, and various other global locations. MT16KTF51264HZ-1G6K1 memory modules are a product manufactured by Micron. We provide cost-effective solutions for memory modules, ensuring timely deliveries around the world.

MT16KTF51264HZ-1G6K1 Micron

MT16KTF51264HZ-1G6K1 electronic component of Micron
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Part No.MT16KTF51264HZ-1G6K1
Manufacturer: Micron
Category:Memory Modules
Description: DRAM Module DDR3L SDRAM 4Gbyte 204SODIMM
Datasheet: MT16KTF51264HZ-1G6K1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 125.9725 ea
Line Total: USD 125.97

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 125.9725

0 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 141.7981

     
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We are delighted to provide the MT16KTF51264HZ-1G6K1 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT16KTF51264HZ-1G6K1 and other electronic components in the Memory Modules category and beyond.

2GB, 4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM Features 1.35V DDR3L SDRAM SODIMM MT16KTF25664HZ 2GB MT16KTF51264HZ 4GB MT16KTF1G64HZ 8GB Figure 1: 204-Pin SODIMM (MO-268 R/C F) Features DDR3L functionality and operations supported as Module height: 30mm (1.181in) defined in the component data sheet 204-pin, small outline dual in-line memory module (SODIMM) Fast data transfer rates: PC3-14900, PC3-12800, PC3-10600, PC3-8500, or PC3-6400 2GB (256 Meg x 64), 4GB (512 Meg x 64), 8GB (1 Gig x 64) V = 1.35V (1.283V1.45V) DD V = 1.5V (1.4251.575V) DD Backward compatible to V = 1.5V 0.075V DD Options Marking V = 3.03.6V DDSPD Operating temperature Nominal and dynamic on-die termination (ODT) for Commercial (0C T +70C) None A data, strobe, and mask signals Package Dual rank 240-pin DIMM (halogen-free) Z Fixed burst chop (BC) of 4 and burst length (BL) of 8 Frequency/CAS latency via the mode register set (MRS) 1.07ns CL = 13 (DDR3-1866) -1G9 2 1.25ns CL = 11 (DDR3-1600) -1G6 On-board I C serial presence-detect (SPD) EEPROM 1.5ns CL = 9 (DDR3-1333) -1G4 Selectable BC4 or BL8 on-the-fly (OTF) 1.87ns CL = 7 (DDR3-1066) -1G1 Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry CL = CL = CL = RCD RP RC Grade Nomenclature 13 11 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G9 PC3-14900 1866 1600 1333 1333 1066 1066 800 667 13.125 13.125 47.125 -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef846206a0 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 ktf16c256 512 1gx64hz.pdf - Rev. H 5/13 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2GB, 4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM Features Table 2: Addressing Parameter 2GB 4GB 8GB Refresh count 8K 8K 8K Row address 16K A 13:0 32K A 14:0 64K A 15:0 Device bank address 8 BA 2:0 8 BA 2:0 8 BA 2:0 Device configuration 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) 4Gb (512 Meg x8) Column address 1K A 9:0 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT41K128M8, 1Gb 1.35V DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16KTF25664HZ-1G6 2GB 256 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT16KTF25664HZ-1G4 2GB 256 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT16KTF25664HZ-1G1 2GB 256 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Table 4: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT41K256M8, 2Gb 1.35V DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16KTF51264HZ-1G6 4GB 512 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT16KTF51264HZ-1G6 4GB 512 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT16KTF51264HZ-1G4 4GB 512 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT16KTF51264HZ-1G1 4GB 512 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Table 5: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT41K512M8, 4Gb 1.35V DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16KTF1G64HZ-1G9 8GB 1 Gig x 64 14.9 GB/s 1.07ns/1866 MT/s 13-13-13 MT16KTF1G64HZ-1G6 8GB 1 Gig x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT16KTF1G64HZ-1G4 8GB 1 Gig x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT16KTF1G64HZ-1G1 8GB 1 Gig x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT16KTF51264HZ-1G4M1. PDF: 09005aef846206a0 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 ktf16c256 512 1gx64hz.pdf - Rev. H 5/13 EN 2011 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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