MT4HTF6464AZ-800H1 Micron

512MB, 1GB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM UDIMM MT4HTF6464AZ 512MB MT4HTF12864AZ 1GB Figure 1: 240-Pin UDIMM (MO-237 R/C C) Features Module Height: 30mm (1.181 in) 240-pin, unbuffered dual in-line memory module Fast data transfer rates: PC2-8500, PC2-6400, PC2-5300, PC2-4200, or PC2-3200 512MB (64 Meg x 64), 1GB (128 Meg x 64) V = V = 1.8V DD DDQ V = 1.73.6V DDSPD Options Marking JEDEC-standard 1.8V I/O (SSTL 18-compatible) Operating temperature Differential data strobe (DQS, DQS ) option Commercial (0C T +70C) None A 1 4n-bit prefetch architecture Industrial (40C T +85C) I A Package Multiple internal device banks for concurrent 240-pin DIMM (halogen-free) Z operation 2 Frequency/CL Programmable CAS latency (CL) 1.875ns CL = 7 (DDR2-1066) -1GA Posted CAS additive latency (AL) 2.5ns CL = 5 (DDR2-800) -80E t WRITE latency = READ latency - 1 CK 2.5ns CL = 6 (DDR2-800) -800 Programmable burst lengths (BL): 4 or 8 3ns CL = 5 (DDR2-667) -667 Adjustable data-output drive strength 1. Contact Micron for industrial temperature Notes: 64ms, 8192-cycle refresh module offerings. On-die termination (ODT) 2. CL = CAS (READ) latency. Serial presence-detect (SPD) with EEPROM Halogen-free Gold edge contacts Single rank Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 7 CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125 -80E PC2-6400 800 800 533 400 12.5 12.5 57.5 -800 PC2-6400 800 667 533 400 15 15 60 -667 PC2-5300 667 553 400 15 15 60 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83bfd5e4 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf4c64 128x64az.pdf - Rev. D 4/14 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512MB, 1GB (x64, SR) 240-Pin DDR2 SDRAM UDIMM Features Table 2: Addressing Parameter 512MB 1GB Refresh count 8K 8K Row address 8K A 12:0 16K A 13:0 Device bank address 8 BA 2:0 8 BA 2:0 Device configuration 1Gb (64 Meg x 16) 2Gb (128 Meg x16) Column address 1K A 9:0 1K A 9:0 Module rank address 1 S0 1 S0 Table 3: Part Numbers and Timing Parameters 512MB Modules 1 Base device: MT47H64M16, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4HTF6464A(I)Z-1GA 512MB 64 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7 MT4HTF6464A(I)Z-80E 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT4HTF6464A(I)Z-800 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT4HTF6464A(I)Z-667 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 512MB Modules 1 Base device: MT47H128M16, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4HTF12864A(I)Z-1GA 1GB 128 Meg x 64 8.5 GB/s 1.875ns/1066 MT/s 7-7-7 MT4HTF12864A(I)Z-80E 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT4HTF12864A(I)Z-800 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT4HTF12864A(I)Z-667 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT4HTF6464AZ-800M1. PDF: 09005aef83bfd5e4 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf4c64 128x64az.pdf - Rev. D 4/14 EN 2009 Micron Technology, Inc. All rights reserved.