256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM
Features
DDR2 SDRAM SODIMM
MT4HTF3264HZ 256MB
MT4HTF6464HZ 512MB
MT4HTF12864HZ 1GB
Figure 1: 200-Pin SODIMM (MO-224 R/C C)
Features
Module height: 30mm (1.181in)
200-pin, small-outline dual in-line memory module
(SODIMM)
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
256MB (32 Meg x 64), 512MB (64 Meg x 64), 1GB
(128 Meg x 64)
V = V = 1.8V
DD DDQ
V = 1.73.6V
DDSPD
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
Options Marking
4n-bit prefetch architecture
Operating temperature
Multiple internal device banks for concurrent opera-
Commercial (0C T +70C) None
tion A
1
Industrial (40C T +85C) I
A
Programmable CAS latency (CL)
Package
Posted CAS additive latency (AL)
200-pin DIMM (halogen-free) Z
t
WRITE latency = READ latency - 1 CK 2
Frequency/CL
Programmable burst lengths (BL): 4 or 8
2.5ns @ CL = 5 (DDR2-800) -80E
Adjustable data-output drive strength 2.5ns @ CL = 6 (DDR2-800) -800
3.0ns @ CL = 5 (DDR2-667) -667
64ms, 8192-cycle refresh
On-die termination (ODT)
Notes: 1. Contact Micron for industrial temperature
module offerings.
Halogen-free
2. CL = CAS (READ) latency.
Serial presence detect (SPD) with EEPROM
Gold edge contacts
Single rank
Table 1: Key Timing Parameters
Data Rate (MT/s) t t t
Speed Industry RCD RP RC
Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns)
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300 667 553 400 15 15 55
-53E PC2-4200 553 400 15 15 55
-40E PC2-3200 400 400 15 15 55
PDF: 09005aef83c05a5d Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
htf4c32_64_128x64hz.pdf - Rev. D 4/14 EN 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM
Features
Table 2: Addressing
Parameter 256MB 512MB 1GB
Refresh count 8K 8K 8K
Row address 8K A[12:0] 8K A[12:0] 16K A[13:0]
Device bank address 4 BA[1:0] 8 BA[2:0] 8 BA[2:0]
Device configuration 512Mb (32 Meg x 16) 1Gb (64 Meg x 16) 2Gb (128 Meg x16)
Column address 1K A[9:0] 1K A[9:0] 1K A[9:0]
Module rank address 1 S0# 1 S0# 1 S0#
Table 3: Part Numbers and Timing Parameters 256MB
1
Base device: MT47H32M16, 512Mb DDR2 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT4HTF3264H(I)Z-80E__ 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT4HTF3264H(I)Z-800__ 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT4HTF3264H(I)Z-667__ 256MB 32 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Table 4: Part Numbers and Timing Parameters 512MB
1
Base device: MT47H64M16, 1Gb DDR2 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT4HTF6464H(I)Z-80E__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT4HTF6464H(I)Z-800__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT4HTF6464H(I)Z-667__ 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Table 5: Part Numbers and Timing Parameters 1GB Modules
1
Base device: MT47H128M16, 2Gb DDR2 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT4HTF12864H(I)Z-80E__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT4HTF12864H(I)Z-800__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT4HTF12864H(I)Z-667__ 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
Notes: 1. The data sheet for the base device can be found on Microns Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT4HTF6464HZ-667M1.
PDF: 09005aef83c05a5d Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
htf4c32_64_128x64hz.pdf - Rev. D 4/14 EN 2009 Micron Technology, Inc. All rights reserved.