X-On Electronics has gained recognition as a prominent supplier of MT4VDDT3264HIY-335F2 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MT4VDDT3264HIY-335F2 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MT4VDDT3264HIY-335F2 Micron

MT4VDDT3264HIY-335F2 electronic component of Micron
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Part No.MT4VDDT3264HIY-335F2
Manufacturer: Micron
Category: Memory Modules
Description: DRAM Module DDR SDRAM 256Mbyte 200SODIMM Tray
Datasheet: MT4VDDT3264HIY-335F2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 24.8803 ea
Line Total: USD 74.64 
Availability - 0
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3
Multiples : 1
3 : USD 24.8803
10 : USD 22.7459
25 : USD 21.1849

   
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We are delighted to provide the MT4VDDT3264HIY-335F2 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT4VDDT3264HIY-335F2 and other electronic components in the Memory Modules category and beyond.

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128MB, 256MB (x64, SR) 200-Pin DDR SDRAM SODIMM Features DDR SDRAM SODIMM MT4VDDT1664H 128MB MT4VDDT3264H 256MB For component data sheets, refer to Microns Web site: www.micron.com Figure 1: 200-Pin SODIMM (MO-224) Features 200-pin, small-outline dual in-line memory module PCB height: 31.75mm (1.25in) (SODIMM) Fast data transfer rates: PC2100, PC2700, or PC3200 128MB (16 Meg x 64) or 256MB (32 Meg x 64) Vdd = Vddq = +2.5V (-40B: Vdd = Vddq = +2.6V) Vddspd = +2.3V to +3.6V 2.5V I/O (SSTL 2-compatible) Internal, pipelined double data rate (DDR) 2n-prefetch architecture Bidirectional data strobe (DQS) transmitted/ received with datathat is, source-synchronous data capture Differential clock inputs (CK and CK ) Options Marking Multiple internal device banks for concurrent 1 Operating temperature operation Commercial (0C T +70C) None Single rank A Industrial (40C T +85C) I Selectable burst lengths (BL): 2, 4, or 8 A Package Auto precharge option 200-pin DIMM (standard) G Auto refresh and self refresh modes: 7.8125s 200-pin DIMM (Pb-free) Y maximum average periodic refresh interval Memory clock, speed, CAS latency Serial presence-detect (SPD) with EEPROM 5ns (200 MHz), 400 MT/s, CL = 3 -40B Selectable CAS latency (CL) for maximum 6ns (167 MHz), 333 MT/s, CL = 2.5 -335 compatibility 2 7.5ns (133 MHz), 266 MT/s, CL = 2 -26A Gold edge contacts 2 7.5ns (133 MHz), 266 MT/s, CL = 2.5 -265 Notes: 1. Contact Micron for industrial temperature module offerings. 2. Not recommended for new designs. Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 3 CL = 2.5 CL = 2 (ns) (ns) (ns) Notes -40B PC3200 400 333 266 15 15 55 -335 PC2700 333 266 18 18 60 1 -26A PC2100 266 266 20 20 65 -265 PC2100 266 200 20 20 65 t t Notes: 1. The values of RCD and RP for -335 modules show 18ns to align with industry specifications actual DDR SDRAM device specifications are 15ns. PDF: 09005aef837131bb/Source: 09005aef8086ea0b Micron Technology, Inc., reserves the right to change products or specifications without notice. dd4c16 32x64h.fm - Rev. E 10/08 EN 1 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 128MB, 256MB (x64, SR) 200-Pin DDR SDRAM SODIMM Features Table 2: Addressing Parameter 128MB 256MB Refresh count 8K 8K Row address 8K (A0A12) 8K (A0A12) Device bank address 4 (BA0, BA1) 4 (BA0, BA1) Device configuration 256Mb (16 Meg x 16) 512Mb (32 Meg x 16) Column address 512 (A0A8) 1K (A0A9) Module rank address 1 (S0 ) 1 (S0 ) Table 3: Part Numbers and Timing Parameters 128MB Modules 1 Base device: MT46V16M16, 256Mb DDR SDRAM Module Module Memory Clock/ Clock Latency 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4VDDT1664HG-40B 128MB 16 Meg x 64 3.2 GB/s 5ns/400 MT/s 3-3-3 MT4VDDT1664HY-40B 128MB 16 Meg x 64 3.2 GB/s 5ns/400 MT/s 3-3-3 MT4VDDT1664HG-335 128MB 16 Meg x 64 2.7 GB/s 6ns/333 MT/s 2.5-3-3 MT4VDDT1664HY-335 128MB 16 Meg x 64 2.7 GB/s 6ns/333 MT/s 2.5-3-3 MT4VDDT1664HG-26A 128MB 16 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2-3-3 MT4VDDT1664HG-265 128MB 16 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 MT4VDDT1664HY-265 128MB 16 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 Table 4: Part Numbers and Timing Parameters 256MB Modules 1 Base device: MT46V32M16, 512Mb DDR SDRAM Module Module Memory Clock/ Clock Latency 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4VDDT3264HG-40B 256MB 32 Meg x 64 3.2 GB/s 5ns/400 MT/s 3-3-3 MT4VDDT3264HY-40B 256MB 32 Meg x 64 3.2 GB/s 5ns/400 MT/s 3-3-3 256MB 32 Meg x 64 2.7 GB/s 6ns/333 MT/s 2.5-3-3 MT4VDDT3264HG-335 256MB 32 Meg x 64 2.7 GB/s 6ns/333 MT/s 2.5-3-3 MT4VDDT3264HY-335 MT4VDDT3264HG-265 256MB 32 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 Notes: 1. The data sheets for the base devices can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT4VDDT3264HY-40BF2. PDF: 09005aef837131bb/Source: 09005aef8086ea0b Micron Technology, Inc., reserves the right to change products or specifications without notice. dd4c16 32x64h.fm - Rev. E 10/08 EN 2 2003 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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