MT4KTF25664HZ-1G9P1 Micron

1GB, 2GB (x64, SR) 204-Pin 1.35V DDR3L SODIMM Features 1.35V DDR3L SDRAM SODIMM MT4KTF12864HZ 1GB MT4KTF25664HZ 2GB Figure 1: 204-Pin SODIMM (MO-268 R/C-C and Features R/C-C3) DDR3L functionality and operations supported as defined in the component data sheet Module height: 30mm (1.18in) 204-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC3-14900, PC3-12800 1GB (128 Meg x 64), 2GB (256 Meg x 64) V = 1.35V (1.2831.45V) DD V = 1.5V (1.4251.575V) DD Backward-compatible to V = 1.5V 0.075V DD V = 3.03.6V DDSPD Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Options Marking Single-rank 1 Operating temperature 8 internal device banks Commercial (0C T +70C) None A Fixed burst chop (BC) of 4 and burst length (BL) of 8 Package via the mode register set (MRS) 204-pin DIMM (halogen-free) Z Selectable BC4 or BL8 on-the-fly (OTF) Frequency/CAS latency 1.07ns CL = 13 (DDR3-1866) -1G9 Gold edge contacts 1.25ns CL = 11 (DDR3-1600) -1G6 Halogen-free Fly-by topology Note: 1. Contact Micron for industrial temperature module offerings. Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry CL = CL = CL = RCD RP RC Grade Nomenclature 13 11 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G9 PC3-14900 1866 1600 1333 1333 1066 1066 800 667 13.125 13.125 47.125 -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef84c19de9 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 ktf4c128 256x64hz.pdf - Rev. F 12/15 EN 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1GB, 2GB (x64, SR) 204-Pin 1.35V DDR3L SODIMM Features Table 2: Addressing Parameter 1GB 2GB Refresh count 8K 8K Row address 16K A 13:0 32K A 14:0 Device bank address 8 BA 2:0 8 BA 2:0 Device configuration 2Gb (128 Meg x 16) 4Gb (256 Meg x 16) Column address 1K A 9:0 1K A 9:0 Module rank address 1 S0 1 S0 Table 3: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT41K128M16, 2Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4KTF12864HZ-1G6 1GB 128 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 Table 4: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT41K256M16, 4Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4KTF25664HZ-1G9 2GB 256 Meg x 64 14.9 GB/s 1.07ns/1866 MT/s 13-13-13 MT4KTF25664HZ-1G6 2GB 256 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT4KTF25664HZ-1G9P1. PDF: 09005aef84c19de9 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 ktf4c128 256x64hz.pdf - Rev. F 12/15 EN 2012 Micron Technology, Inc. All rights reserved.