1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT9HTF12872FZ 1GB Transparent mode for DRAM test support Features V = V = 1.8V for DRAM DD DDQ 240-pin, DDR2 fully-buffered dual in-line memory V = 0.9V SDRAM command and address termina- REF module (FBDIMM) tion Fast data transfer rates: PC2-5300 or PC2-6400 V = 1.5V for AMB CC 1GB (128 Meg x 72) V = 33.6V for AMB and EEPROM DDSPD 4.0 Gb/s and 4.8 Gb/s link transfer rates Serial presence-detect (SPD) with EEPROM High-speed, 1.5V differential, point-to-point link be- Gold edge contacts tween the host controller and advanced memory Single rank buffer (AMB) Supports 95C operation with 2X refresh Fault-tolerant can work around a bad bit lane in Halogen-free PCB each direction High-density scaling with up to eight FBDIMMs per Figure 1: 240-Pin FBDIMM (MO-256 R/C A) channel Module height: 30.35mm (1.19in) SMBus interface to AMB for configuration register access In-band and out-of-band command access Deterministic protocol Enables memory controller to optimize DRAM ac- cesses for maximum performance Options Marking Delivers precise control and repeatable memory Package behavior 240-pin DIMM (Halogen-free) Z Automatic DDR2 SDRAM bus and channel calibra- Frequency/CAS latency tion 2.5ns CL = 5 (DDR2-800) -80E Transmitter de-emphasis to reduce ISI 3.0ns CL = 5 (DDR2-667) -667 MBIST and IBIST test functions Table 1: Key Timing Parameters Data Rate (MT/s) t Speed RCD t t Grade Industry Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) RP (ns) RC (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -667 PC2-5300 667 533 400 15 15 55 Table 2: Addressing Parameter 1GB Refresh count 8K Device bank address 8 BA 2:0 Device configuration 1Gb (128 Meg x 8) Row address 16K A 13:0 PDF: 09005aef83de8266 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf9c128x72fz.pdf - Rev. A 12/09 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM Features Table 2: Addressing (Continued) Parameter 1GB Column address 1K A 9:0 Module rank address 1 S0 Table 3: Part Numbers and Timing Parameters 1GB 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles Link Transfer 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) Rate MT9HTF12872FZ-80E 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 4.8 GT/s MT9HTF12872FZ-667 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 4.0 GT/s 1. Data sheets for the base devices can be Notes: found on Microns Web page. 2. All part numbers end with a four-place code (not shown) that designates compo- nent, PCB, and AMB revisions. Consult facto- ry for current revision codes. Example: MT9HTF12872FZ-667H1D4. PDF: 09005aef83de8266 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf9c128x72fz.pdf - Rev. A 12/09 EN 2009 Micron Technology, Inc. All rights reserved.