X-On Electronics has gained recognition as a prominent supplier of MT9HTF12872PZ-80EM1 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MT9HTF12872PZ-80EM1 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MT9HTF12872PZ-80EM1 Micron

MT9HTF12872PZ-80EM1 electronic component of Micron
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Part No.MT9HTF12872PZ-80EM1
Manufacturer: Micron
Category: Memory Modules
Description: DRAM Module DDR2 SDRAM 1Gbyte 240RDIMM
Datasheet: MT9HTF12872PZ-80EM1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the MT9HTF12872PZ-80EM1 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT9HTF12872PZ-80EM1 and other electronic components in the Memory Modules category and beyond.

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512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM RDIMM MT9HTF6472PZ 512MB MT9HTF12872PZ 1GB MT9HTF25672PZ 2GB Figure 1: 240-Pin RDIMM (MO-237 R/C F) Features 240-pin, registered dual in-line memory module Module height: 30mm (1.181in) Fast data transfer rates: PC2-6400, PC2-5300, PC2-4200, or PC2-3200 512MB (64 Meg x 72), 1GB (128 Meg x 72), 2GB (256 Meg x 72) Supports ECC error detection and correction V = V = 1.8V DD DDQ Options Marking V = 1.73.6V DDSPD Parity P JEDEC-standard 1.8V I/O (SSTL 18-compatible) Operating temperature Differential data strobe (DQS, DQS ) option Commercial (0C T +70C) None A 4n-bit prefetch architecture 1 Industrial (40C T +85C) I A Multiple internal device banks for concurrent Package operation 240-pin DIMM (halogen-free) Z 2 Frequency/CL Programmable CAS latency (CL) 2.5ns CL = 5 (DDR2-800) -80E Posted CAS additive latency (AL) 2.5ns CL = 6 (DDR2-800) -800 t WRITE latency = READ latency - 1 CK 3.0ns CL = 5 (DDR2-667) -667 Programmable burst lengths (BL): 4 or 8 1. Contact Micron for industrial temperature Notes: Adjustable data-output drive strength module offerings. 64ms, 8192-cycle refresh 2. CL = CAS (READ) latency registered mode On-die termination (ODT) will add one clock cycle to CL. Serial presence-detect (SPD) with EEPROM Single rank Gold edge contacts Halogen-free Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83c641c6 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf9c64 128 256x72pz.pdf - Rev. E 4/14 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM Features Table 2: Addressing Parameter 512MB 1GB 2GB Refresh count 8K 8K 8K Row address 16K A 13:0 16K A 13:0 32K A 14:0 Device bank address 4 BA 1:0 8 BA 2:0 8 BA 2:0 Device configuration 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) Column address 1K A 9:0 1K A 9:0 1K A 9:0 Module rank address 1 S0 1 S0 1 S0 Table 3: Part Numbers and Timing Parameters 512MB 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9HTF6472P(I)Z-80E 512MB 64 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 5-5-5 MT9HTF6472P(I)Z-800 512MB 64 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 6-6-6 MT9HTF6472P(I)Z-667 512MB 64 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 1GB 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9HTF12872P(I)Z-80E 1GB 128 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 5-5-5 MT9HTF12872P(I)Z-800 1GB 128 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 6-6-6 MT9HTF12872P(I)Z-667 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 5: Part Numbers and Timing Parameters 2GB 1 Base device: MT47H256M8, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9HTF25672P(I)Z-80E 2GB 256 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 5-5-5 MT9HTF25672P(I)Z-800 2GB 256 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 6-6-6 MT9HTF25672P(I)Z-667 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. Data sheets for the base device can be found on Microns web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT9HTF12872PZ-80EM1. PDF: 09005aef83c641c6 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf9c64 128 256x72pz.pdf - Rev. E 4/14 EN 2009 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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