512MB, 1GB (x72, SR) 200-Pin DDR2 SDRAM SORDIMM Features DDR2 SDRAM SORDIMM MT9HTF6472RHZ 512MB MT9HTF12872RHZ 1GB Figure 1: 200-Pin SORDIMM (R/C A) Features Module height: 30mm (1.181 in) 200-pin, small-outline registered dual in-line memory module Fast data transfer rates: PC2-6400, PC2-5300, or PC2-4200 512MB (64 Meg x 72), 1GB (128 Meg x 72) Supports ECC error detection and correction V = V = 1.8V DD DDQ V = 3.03.6V DDSPD JEDEC-standard 1.8V I/O (SSTL 18-compatible) Differential data strobe (DQS, DQS ) option Options Marking 4n-bit prefetch architecture Operating temperature Multiple internal device banks for concurrent Commercial (0C T +70C) None A operation 1 Industrial (40C T +85C) I A Programmable CAS latency (CL) Package Posted CAS additive latency (AL) 200-pin DIMM (halogen-free) Z t 2 WRITE latency = READ latency - 1 CK Frequency/CAS latency Programmable burst lengths (BL): 4 or 8 2.5 CL = 5 (DDR2-800) -80E 2.5 CL = 6 (DDR2-800) -800 Adjustable data-output drive strength 3.0ns CL = 5 (DDR2-667) -667 64ms, 8192-cycle refresh Notes: 1. Contact Micron for industrial temperature On-die termination (ODT) module offerings. On-board temperature sensor with integrated 2. CL = CAS (READ) latency registered mode serial presence-detect (SPD) EEPROM will add one clock cycle to CL. Phase-lock loop (PLL) to reduce system clock line loading Gold edge contacts Single rank Halogen-free Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83ebee86 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf9c64 128x72rhz Rev. C 4/14 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512MB, 1GB (x72, SR) 200-Pin DDR2 SDRAM SORDIMM Features Table 2: Addressing Parameter 512MB 1GB Refresh count 8K 8K Row address 16K A 13:0 16K A 13:0 Device bank address 4 BA 1:0 8 BA 2:0 Device configuration 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) Column address 1K A 9:0 1K A 9:0 Module rank address 1 S0 1 S0 Table 3: Part Numbers and Timing Parameters 512MB Modules 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9HTF6472RH(I)Z-80E 512MB 64 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT9HTF6472RH(I)Z-800 512MB 64 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT9HTF6472RH(I)Z-667 512MB 64 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9HTF12872RH(I)Z-80E 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT9HTF12872RH(I)Z-800 1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT9HTF12872RH(I)Z-667 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT9HTF12872RHZ-80EM1. PDF: 09005aef83ebee86 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf9c64 128x72rhz Rev. C 4/14 EN 2010 Micron Technology, Inc. All rights reserved.