128MB, 256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM Features DDR SDRAM RDIMM 1 MT9VDDT1672 128MB 2 MT9VDDT3272 256MB 2 MT9VDDT6472 512MB For component data sheets, refer to Microns Web site: www.micron.com 184-Pin RDIMM Figures Features 184-pin, registered dual in-line memory module Figure 1: Tall-Height Layout (RDIMM) (MO-206-EA R/C A) Tall and standard height PCB modules Fast data transfer rates: PC2100 or PC2700 128MB (16 Meg x 72), 256MB (32 Meg x 72), and PCB height: 43.18mm (1.7in) 512MB (64 Meg x 72) Supports ECC error detection and correction VDD = VDDQ = +2.5V VDDSPD = +2.3V to +3.6V 2.5V I/O (SSTL 2-compatible) Internal, pipelined double data rate (DDR) 2n-prefetch architecture Bidirectional data strobe (DQS) transmitted/ Figure 2: Standard-Height Layout received with datathat is, source-synchronous (MO-206-CA R/C L) data capture Differential clock inputs (CK and CK ) PCB height: 30.48mm (1.2in) Multiple internal device banks for concurrent operation Single rank Selectable burst lengths (BL): 2, 4, or 8 Auto precharge option Auto refresh and self refresh modes: 15.625s (128MB) and 7.8125s (256MB and 512MB) maximum average periodic refresh interval Options Marking 3 Serial presence-detect (SPD) with EEPROM Operating temperature Selectable CAS latency (CL) for maximum Commercial (0C T +70C) None A compatibility Industrial (40C T +85C) I A Gold edge contacts Package 184-pin DIMM (standard) G 184-pin DIMM (Pb-free) Y 4 Memory clock, speed, CAS latency 6.0ns (167 MHz), 333 MT/s, CL = 2.5 -335 7.5ns (133 MHz), 266 MT/s, CL = 2.0 -262 7.5ns (133 MHz), 266 MT/s, CL = 2.0 -26A 7.5ns (133 MHz), 266 MT/s, CL = 2.5 -265 Notes: 1. End of life. 2. Not recommended for new designs. 3. Contact Micron for industrial temperature module offerings. 4. CL = CAS (READ) latency registered mode will add one clock cycle to CL. PDF: 09005aef80e119b2/Source: 09005aef80e11976 Micron Technology, Inc., reserves the right to change products or specifications without notice. DD9C16 32 64x72.fm - Rev. D 1/08 EN 1 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 128MB, 256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM Features Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 2.5 CL = 2 (ns) (ns) (ns) Notes -335 PC2700 333 266 18 18 60 1 -262 PC2100 266 266 15 15 60 -26A PC2100 266 266 20 20 65 -265 PC2100 266 200 20 20 65 t t Notes: 1. The values of RCD and RP for -335 modules show 18ns to align with industry specifications actual DDR SDRAM device specifications are 15ns. Table 2: Addressing Parameter 128MB 256MB 512MB Refresh count 4K 8K 8K Row address 4K (A0A11) 8K (A0A12) 8K (A0A12) Device bank address 4 (BA0, BA1) 4 (BA0, BA1) 4 (BA0, BA1) Device configuration 128Mb (16 Meg x 8) 256Mb (32 Meg x 8) 512Mb (64 Meg x 8) Column address 1K (A0A9) 1K (A0A9) 2K (A0A9, A11) Module rank address 1 (S0 ) 1 (S0 ) 1 (S0 ) Table 3: Part Numbers and Timing Parameters 128MB Modules 1 Base device: MT46V16M8, 128Mb DDR SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9VDDT1672G-335 128MB 16 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 3-3-3 MT9VDDT1672Y-335 128MB 16 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 3-3-3 MT9VDDT1672G-26A 128MB 16 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2-3-3 MT9VDDT1672G-265 128MB 16 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 MT9VDDT1672Y-265 128MB 16 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 Table 4: Part Numbers and Timing Parameters 256MB Modules 1 Base device: MT46V32M8, 256Mb DDR SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9VDDT3272G-335 256MB 32 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3 MT9VDDT3272G-262 256MB 32 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2-2-2 MT9VDDT3272G-26A 256MB 32 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2-3-3 MT9VDDT3272Y-26A 256MB 32 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2-3-3 MT9VDDT3272G-265 256MB 32 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 MT9VDDT3272Y-265 256MB 32 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 Notes: 1. Data sheets for the base devices can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT9VDDT3272G-335G3. PDF: 09005aef80e119b2/Source: 09005aef80e11976 Micron Technology, Inc., reserves the right to change products or specifications without notice. DD9C16 32 64x72.fm - Rev. D 1/08 EN 2 2003 Micron Technology, Inc. All rights reserved