X-On Electronics has gained recognition as a prominent supplier of MTA16ATF2G64HZ-2G3A1 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MTA16ATF2G64HZ-2G3A1 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MTA16ATF2G64HZ-2G3A1 Micron

MTA16ATF2G64HZ-2G3A1 electronic component of Micron
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Part No.MTA16ATF2G64HZ-2G3A1
Manufacturer: Micron
Category: Memory Modules
Description: Memory Modules
2GB DDR4 2400MT/s SDRAM SODIMM Memory Module
Datasheet: MTA16ATF2G64HZ-2G3A1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 374.1818 ea
Line Total: USD 374.18 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 374.1818

   
Manufacturer
Product Category
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We are delighted to provide the MTA16ATF2G64HZ-2G3A1 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTA16ATF2G64HZ-2G3A1 and other electronic components in the Memory Modules category and beyond.

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The Micron MTA16ATF2G64HZ-2G3A1 is a 16 GB, DDR4 based, 2133 MHz, 64M x 8 (x8), 2 Gb DRAM Unbuffered DIMM (DDR4-2133), operating at 1.2V and made using 16nm technology. It is equipped with a heat spreader and utilizes 'staggered' and 'equivalent' on-die termination (ODT) architecture.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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