8GB (x72, ECC, SR) 288-Pin DDR4 UDIMM Features DDR4 SDRAM UDIMM MTA9ASF1G72AZ 8GB Figure 1: 288-Pin UDIMM (MO-309, R/C D1) Features Module height: 31.25mm (1.23in) DDR4 functionality and operations supported as de- fined in the component data sheet 288-pin, unbuffered dual in-line memory module (UDIMM) Fast data transfer rates: PC4-2666 and PC4-2400 8GB (1 Gig x 72) Options Marking V = 1.20V (NOM) DD Operating temperature V = 2.5V (NOM) PP Commercial None V = 2.5V (NOM) DDSPD (0C T 95C) OPER Supports ECC error detection and correction Package Nominal and dynamic on-die termination (ODT) for 288-pin DIMM (halogen-free) Z data, strobe, and mask signals Frequency/CAS latency 0.75ns CL = 19 (DDR4-2666) -2G6 Low-power auto self refresh (LPASR) 0.83ns CL = 17 (DDR4-2400) -2G3 Data bus inversion (DBI) for data bus On-die V generation and calibration REFDQ Single-rank 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 16 internal banks 4 groups of 4 banks each Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) CL = Industry 20, t t t Speed Nomen- CL = CL = CL = CL = CL = CL = CL = CL = CL = CL = RCD RP RC Grade clature 19 18 17 16 15 14 13 12 11 10 CL = 9 (ns) (ns) (ns) -2G6 PC4-2666 2666 2666 2400 2133 2133 1866 1866 1600 1333 14.16 14.16 46.16 -2G4 PC4-2400 2400 2400 2400 2133 1866 1866 1600 1600 1333 13.32 13.32 45.32 -2G3 PC4-2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G1 PC4-2133 2133 2133 1866 1866 1600 1600 1333 13.5 13.5 46.5 PDF: 09005aef864bc2a8 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 asf9c1gx72az.pdf Rev. C 1/16 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.8GB (x72, ECC, SR) 288-Pin DDR4 UDIMM Features Table 2: Addressing Parameter 8GB Row address 64K A 15:0 Column address 1K A 9:0 Device bank group address 4 BG 1:0 Device bank address per group 4 BA 1:0 Device configuration 8Gb (1 Gig x 8), 16 banks Module rank address CS0 n Table 3: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT40A1G8, 8Gb DDR4 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MTA9ASF1G72AZ-2G6 8GB 1 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 MTA9ASF1G72AZ-2G3 8GB 1 Gig x 72 19.2 GB/s 0.83ns/2400 MT/s 17-17-17 Notes: 1. The data sheet for the base device can be found at micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MTA9ASF1G72AZ-2G3B1. PDF: 09005aef864bc2a8 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 asf9c1gx72az.pdf Rev. C 1/16 EN 2015 Micron Technology, Inc. All rights reserved.