MTA18ASF1G72HZ-2G3B1 Micron

8GB (x72, ECC DR) 260-Pin DDR4 SODIMM Features DDR4 SDRAM SODIMM MTA18ASF1G72HZ 8GB Figure 1: 260-Pin SODIMM (MO-310 R/C F) Features Module height: 30mm (1.181in) DDR4 functionality and operations supported as defined in the component data sheet 260-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC4-2666, PC4-2400, or PC4-2133 8GB (1 Gig x 72) V = 1.20V (NOM) DD V = 2.5V (NOM) PP V = 2.5V (NOM) DDSPD Figure 2: 260-Pin SODIMM (MO-310 R/C H) Nominal and dynamic on-die termination (ODT) for Module height: 30mm (1.181in) data, strobe, and mask signals Low-power auto self refresh (LPASR) Data bus inversion (DBI) for data bus On-die V generation and calibration REFDQ Dual-rank 2 Onboard I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 16 internal banks 4 groups of 4 banks each Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Options Marking Selectable BC4 or BL8 on-the-fly (OTF) Operating temperature Gold edge contacts Commercial None (0C T 95C) Halogen-free OPER Package Fly-by topology 260-pin DIMM (halogen-free) Z Terminated control, command, and address bus Frequency/CAS latency 0.75ns CL = 19 (DDR4-2666) -2G6 0.83ns CL = 17 (DDR4-2400) -2G3 0.93ns CL = 15 (DDR4-2133) -2G1 CCMTD-1725822587-9688 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 asf18c1gx72hz.pdf Rev. H 4/18 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.8GB (x72, ECC DR) 260-Pin DDR4 SODIMM Features Table 1: Key Timing Parameters Data Rate (MT/s) CL = Industry 20, t t t Speed Nomen- CL = CL = CL = CL = CL = CL = CL = CL = CL = CL = CL = RCD RP RC Grade clature 19 18 17 16 15 14 13 12 11 10 9 (ns) (ns) (ns) -2G6 PC4-2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G3 PC4-2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G1 PC4-2133 2133 2133 1866 1866 1600 1600 1333 1333 13.5 13.5 46.5 Table 2: Addressing Parameter 8GB Row address 16K A 14:0 Column address 1K A 9:0 Device bank group address 4 BG 1:0 Device bank address per group 4 BA 1:0 Device configuration 4Gb (512 Meg x 8), 16 banks Module rank address CS n 1:0 Table 3: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT40A512M8, 4Gb DDR4 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MTA18ASF1G72HZ-2G6 8GB 1 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 MTA18ASF1G72HZ-2G3 8GB 1 Gig x 72 19.2 GB/s 0.83ns/2400 MT/s 17-17-17 MTA18ASF1G72HZ-2G1 8GB 1 Gig x 72 17.0 GB/s 0.93ns/2133 MT/s 15-15-15 Notes: 1. The data sheet for the base device can be found on Microns web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MTA18ASF1G72HZ-2G6B1. CCMTD-1725822587-9688 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 asf18c1gx72hz.pdf Rev. H 4/18 EN 2014 Micron Technology, Inc. All rights reserved.