X-On Electronics has gained recognition as a prominent supplier of MTA18ASF2G72PZ-2G3B1 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MTA18ASF2G72PZ-2G3B1 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MTA18ASF2G72PZ-2G3B1 Micron

MTA18ASF2G72PZ-2G3B1 electronic component of Micron
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Part No.MTA18ASF2G72PZ-2G3B1
Manufacturer: Micron
Category: Memory Modules
Description: DRAM Module DDR4 SDRAM 16Gbyte 288RDIMM
Datasheet: MTA18ASF2G72PZ-2G3B1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the MTA18ASF2G72PZ-2G3B1 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTA18ASF2G72PZ-2G3B1 and other electronic components in the Memory Modules category and beyond.

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16GB (x72, ECC, SR) 288-Pin DDR4 RDIMM Features DDR4 SDRAM RDIMM Addendum MTA18ASF2G72PZ 16GB Figure 1: 288-Pin RDIMM (MO-309, R/C-C1, Features R/C-C2) DDR4 functionality and operations supported as defined in the component data sheet U1 Features and specifications defined in the Micron U7 U2 U3 U4 U5 U6 U8 U9 U10 U11 DDR4 RDIMM core data sheet 288-pin, registered dual in-line memory module (RDIMM) Primary Side Fast data transfer rates: PC4-3200, PC4-2933, PC4-2666, or PC4-2400 16GB (2 Gig x 72) U12 U13 U14 U15 U16 U17 U18 U19 U20 Single-rank 16 internal banks 4 groups of 4 banks each Secondary Side Options Marking Operating temperature Commercial (0C T 95C) None OPER Package 288-pin DIMM (halogen-free) Z Frequency/CAS latency 0.625ns CL = 22 (DDR4-3200) -3G2 0.682ns CL = 21 (DDR4-2933) -2G9 0.75ns CL = 19 (DDR4-2666) -2G6 0.83ns CL = 17 (DDR4-2400) -2G3 Table 1: Addressing Parameter 16GB Row address 128K A 16:0 Column address 1K A 9:0 Device bank group address 4 BG 1:0 Device bank address per group 4 BA 1:0 Device configuration 8Gb (2 Gig x 4), 16 banks Module rank address 1 CS0 n CCMTD-1725822587-9900 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 asf18c2gx72pz.pdf - DRAFT Rev. I 1/20 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.16GB (x72, ECC, SR) 288-Pin DDR4 RDIMM Features Table 2: Part Numbers and Timing Parameters 16GB Modules 1 Base device: MT40A2G4, 8Gb DDR4 SDRAM Module Module Memory Clock/ Clock Cycles 2 Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) n n MTA18ASF2G72PZ-3G2 16GB 2 Gig x 72 25.6 GB/s 0.625ns/3200 MT/s 22-22-22 MTA18ASF2G72PZ-2G9 16GB 2 Gig x 72 23.47GB/s 0.682/2933 MT/s 21-21-21 MTA18ASF2G72PZ-2G6 16GB 2 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 MTA18ASF2G72PZ-2G3 16GB 2 Gig x 72 19.2 GB/s 0.83ns/2400 MT/s 17-17-17 Notes: 1. The data sheet for the base device can be found on micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MTA18ASF2G72PZ-3G2J3. CCMTD-1725822587-9900 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 asf18c2gx72pz.pdf - DRAFT Rev. I 1/20 EN 2015 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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