X-On Electronics has gained recognition as a prominent supplier of MTA36ASF4G72LZ-2G6D1 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MTA36ASF4G72LZ-2G6D1 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MTA36ASF4G72LZ-2G6D1 Micron

MTA36ASF4G72LZ-2G6D1 electronic component of Micron
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Part No.MTA36ASF4G72LZ-2G6D1
Manufacturer: Micron
Category: Memory Modules
Description: DRAM Module DDR4 SDRAM 32Gbyte 288LRDIMM
Datasheet: MTA36ASF4G72LZ-2G6D1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 345.0368 ea
Line Total: USD 34503.68 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 100
Multiples : 1
100 : USD 345.0368

   
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We are delighted to provide the MTA36ASF4G72LZ-2G6D1 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTA36ASF4G72LZ-2G6D1 and other electronic components in the Memory Modules category and beyond.

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32GB (x72, ECC, DR) 288-Pin DDR4 LRDIMM Features DDR4 SDRAM LRDIMM MTA36ASF4G72LZ 32GB Figure 1: 288-Pin LRDIMM (MO-309, R/C-B, R/C- Features B1) DDR4 functionality and operations supported as Module height: 31.25mm (1.23in) defined in the component data sheet 288-pin, command/address/control registered, data buffered dual in-line, load reduced memory module (LRDIMM) Fast data transfer rates: PC4-2666, PC4-2400 32GB (4 Gig x 72) Options Marking V = 1.20V (NOM) DD Operating temperature V = 2.5V (NOM) PP Commercial (0C T 95C) None OPER V = 2.5V (NOM) DDSPD Package Supports ECC error detection and correction 288-pin DIMM (halogen-free) Z Nominal and dynamic on-die termination (ODT) for Frequency/CAS latency data, strobe, and mask signals 0.75ns CL = 19 (DDR4-2666) -2G6 Low-power auto self refresh (LPASR) 0.83ns CL = 17 (DDR4-2400) -2G3 On-die internal, adjustable, V generation REFDQ Dual-rank 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 16 internal banks 4 groups of 4 banks each Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Multiplexed command, and address bus Terminated control, command and address bus Table 1: Key Timing Parameters Data Rate (MT/s) CL = Industry 20, t t t Speed Nomen- CL = CL = CL = CL = CL = CL = CL = CL = CL = CL = RCD RP RC Grade clature 19 18 17 16 15 14 13 12 11 10 CL = 9 (ns) (ns) (ns) -2G6 PC4-2666 2666 2666 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G4 PC4-2400 2400 2400 2400 2133 1866 1866 1600 1600 1333 13.32 13.32 45.32 -2G3 PC4-2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G1 PC4-2133 2133 2133 1866 1866 1600 1600 1333 13.5 13.5 46.5 09005aef863a8960 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 asf36c4gx72lz.pdf - Rev. D 8/16 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.32GB (x72, ECC, DR) 288-Pin DDR4 LRDIMM Features Table 2: Addressing Parameter 32GB Row address 128K A 16:0 Column address 1K A 9:0 Device bank group address 4 BG 1:0 Device bank address per group 4 BA 1:0 Device configuration 8Gb (2 Gig x 4), 16 banks Module rank address 2 CS n 1:0 Table 3: Part Numbers and Timing Parameters 32GB Modules 1 Base device: MT40A2G4, 8Gb DDR4 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MTA36ASF4G72LZ-2G6 32GB 4 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 MTA36ASF4G72LZ-2G3 32GB 4 Gig x 72 19.2 GB/s 0.83ns/2400 MT/s 17-17-17 Notes: 1. The data sheet for the base device can be found on micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MTA36ASF4G72LZ-2G6D1. 09005aef863a8960 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 asf36c4gx72lz.pdf - Rev. D 8/16 EN 2015 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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