MTA18ASF2G72HZ-2G6E1 Micron

16GB (x72, ECC DR) 260-Pin DDR4 SODIMM Features DDR4 SDRAM SODIMM MTA18ASF2G72HZ 16GB Figure 1: 260-Pin SODIMM (MO-310 R/C H) Features Module Height: 30mm (1.181in) DDR4 functionality and operations supported as defined in the component data sheet 260-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC4-3200, PC4-2666 or PC4-2400 16GB (2 Gig x 72) V = 1.20V (NOM) DD V = 2.5V (NOM) PP V = 2.5V (NOM) DDSPD Figure 2: 260-Pin SODIMM (MO-310 R/C G1) Nominal and dynamic on-die termination (ODT) for Module Height: 30mm (1.181 in) data, strobe, and mask signals Low-power auto self refresh (LPASR) Data bus inversion (DBI) for data bus On-die V generation and calibration REFDQ Dual-rank 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 16 internal banks; 4 groups of 4 banks each Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Options Marking Selectable BC4 or BL8 on-the-fly (OTF) Operating temperature Gold edge contacts Commercial None (0C T 95C) Halogen-free OPER Package Fly-by topology 260-pin DIMM (halogen-free) Z Terminated control, command, and address bus Frequency/CAS latency 0.62ns @ CL = 22 (DDR4-3200) -3G2 0.75ns @ CL = 19 (DDR4-2666) -2G6 0.83ns @ CL = 17 (DDR4-2400) -2G3 Table 1: Key Timing Parameters Data Rate (MT/s) CL = t t t 22/ RCD RP RC PC4- 24 21 20 19 18 17 16 15 14 13 12 11 10 9 (ns) (ns) (ns) -3G2 3200 3200 3200/ 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 13.75 13.75 45.75 CCMTD-1725822587-9881 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 asf18c2gx72hz.pdf Rev. H 4/18 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Speed Grade16GB (x72, ECC DR) 260-Pin DDR4 SODIMM Features Table 1: Key Timing Parameters (Continued) Data Rate (MT/s) CL = t t t 22/ RCD RP RC PC4- 24 21 20 19 18 17 16 15 14 13 12 11 10 9 (ns) (ns) (ns) -2G9 2933 2933/ 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.32 14.32 46.32 2933 -2G6 2666 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G3 2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G1 2133 2133 2133 1866 1866 1600 1600 1333 1333 13.5 13.5 46.5 Table 2: Addressing Parameter 16GB Row address 64K A[15:0] Column address 1K A[9:0] Device bank group address 4 BG[1:0] Device bank address per group 4 BA[1:0] Device configuration 8Gb (1Gig x 8), 16 banks Module rank address CS_n[1:0] Table 3: Part Numbers and Timing Parameters 16GB Modules 1 Base device: MT40A1G8, 8Gb DDR4 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) 16GB 2 Gig x 72 25.6 GB/s 0.625ns/3200 22-22-22 MTA18ASF2G72HZ-3G2__ MT/s MTA18ASF2G72HZ-2G6__ 16GB 2 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 MTA18ASF2G72HZ-2G3__ 16GB 2 Gig x 72 19.2 GB/s 0.83ns/2400 MT/s 17-17-17 Notes: 1. The data sheet for the base device can be found on micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MTA18ASF2G72HZ-3G2E1. CCMTD-1725822587-9881 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 asf18c2gx72hz.pdf Rev. H 4/18 EN 2015 Micron Technology, Inc. All rights reserved. Speed Grade