16GB (x72, ECC, DR) 288-Pin DDR4 UDIMM
Features
DDR4 SDRAM UDIMM
MTA18ASF2G72AZ 16GB
Figure 1: 288-Pin UDIMM (MO-309, R/C-E1)
Features
Module height: 31.25mm (1.23in)
DDR4 functionality and operations supported as
defined in the component data sheet
288-pin, unbuffered dual in-line memory module
(UDIMM)
Fast data transfer rates: PC4-3200, PC4-2666, or
PC4-2400
Options Marking
16GB (2 Gig x 72)
Operating temperature
V = 1.20V (NOM)
DD
Commercial None
V = 2.5V (NOM)
PP
(0C T 95C)
OPER
V = 2.5V (NOM)
DDSPD Package
Supports ECC error detection and correction 288-pin DIMM (halogen-free) Z
Frequency/CAS latency
Nominal and dynamic on-die termination (ODT) for
0.625ns @ CL = 22 (DDR4-3200) -3G2
data, strobe, and mask signals
0.75ns @ CL = 19 (DDR4-2666) -2G6
Low-power auto self refresh (LPASR)
0.83ns @ CL = 17 (DDR4-2400) -2G3
Data bus inversion (DBI) for data bus
On-die V generation and calibration
REFDQ
Dual-rank
2
On-board I C temperature sensor with integrated
serial presence-detect (SPD) EEPROM
4 internal device bank groups with 4 banks per
group produce 16 device banks
Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
Selectable BC4 or BL8 on-the-fly (OTF)
Gold edge contacts
Halogen-free
Fly-by topology
Terminated control, command, and address bus
Table 1: Key Timing Parameters
Data Rate (MT/s)
CL =
t t t
22/ RCD RP RC
PC4- 24 21 20 19 18 17 16 15 14 13 12 11 10 9 (ns) (ns) (ns)
-3G2 3200 3200 3200/ 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 13.75 13.75 45.75
-2G9 2933 2933/ 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.32 14.32 46.32
2933
PDF: CCMTD-1725822587-9907 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
asf18c2gx72az.pdf Rev. E 11/17 EN 2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Speed
Grade16GB (x72, ECC, DR) 288-Pin DDR4 UDIMM
Features
Table 1: Key Timing Parameters (Continued)
Data Rate (MT/s)
CL =
t t t
22/ RCD RP RC
PC4- 24 21 20 19 18 17 16 15 14 13 12 11 10 9 (ns) (ns) (ns)
-2G6 2666 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16
-2G3 2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16
-2G1 2133 2133 2133 1866 1866 1600 1600 1333 1333 13.5 13.5 46.5
Table 2: Addressing
Parameter 16GB
Row address 64K A[15:0]
Column address 1K A[9:0]
Device bank group address 4 BG[1:0]
Device bank address per group 4 BA[1:0]
Device configuration 8Gb (1 Gig x 8), 16 banks
Module rank address 2 CS_n[1:0]
Table 3: Part Numbers and Timing Parameters 16GB Modules
1
Base device: MT40A1G8, 8Gb DDR4 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
16GB 2 Gig x 72 25.6 GB/s 0.625ns/3200 22-22-22
MTA18ASF2G72AZ-3G2__
MT/s
MTA18ASF2G72AZ-2G6__ 16GB 2 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 19-19-19
MTA18ASF2G72AZ-2G3__ 16GB 2 Gig x 72 19.2 GB/s 0.83ns/2400 MT/s 17-17-17
Notes: 1. The data sheet for the base device can be found at micron.com.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MTA18ASF2G72AZ-3G2E1.
PDF: CCMTD-1725822587-9907 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
asf18c2gx72az.pdf Rev. E 11/17 EN 2015 Micron Technology, Inc. All rights reserved.
Speed
Grade