X-On Electronics has gained recognition as a prominent supplier of MTA18ASF2G72AZ-2G6D1 Memory Modules across the USA, India, Europe, Australia, and various other global locations. MTA18ASF2G72AZ-2G6D1 Memory Modules are a product manufactured by Micron. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

MTA18ASF2G72AZ-2G6D1 Micron

MTA18ASF2G72AZ-2G6D1 electronic component of Micron
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Part No.MTA18ASF2G72AZ-2G6D1
Manufacturer: Micron
Category: Memory Modules
Description: Memory Modules DDR4 16GB EUDIMM
Datasheet: MTA18ASF2G72AZ-2G6D1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
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1 : USD 142.0865
25 : USD 126.5523
50 : USD 125.9724
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Obsolete
   
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We are delighted to provide the MTA18ASF2G72AZ-2G6D1 from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTA18ASF2G72AZ-2G6D1 and other electronic components in the Memory Modules category and beyond.

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16GB (x72, ECC, DR) 288-Pin DDR4 UDIMM Features DDR4 SDRAM UDIMM MTA18ASF2G72AZ 16GB Figure 1: 288-Pin UDIMM (MO-309, R/C-E1) Features Module height: 31.25mm (1.23in) DDR4 functionality and operations supported as defined in the component data sheet 288-pin, unbuffered dual in-line memory module (UDIMM) Fast data transfer rates: PC4-3200, PC4-2666, or PC4-2400 Options Marking 16GB (2 Gig x 72) Operating temperature V = 1.20V (NOM) DD Commercial None V = 2.5V (NOM) PP (0C T 95C) OPER V = 2.5V (NOM) DDSPD Package Supports ECC error detection and correction 288-pin DIMM (halogen-free) Z Frequency/CAS latency Nominal and dynamic on-die termination (ODT) for 0.625ns @ CL = 22 (DDR4-3200) -3G2 data, strobe, and mask signals 0.75ns @ CL = 19 (DDR4-2666) -2G6 Low-power auto self refresh (LPASR) 0.83ns @ CL = 17 (DDR4-2400) -2G3 Data bus inversion (DBI) for data bus On-die V generation and calibration REFDQ Dual-rank 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 4 internal device bank groups with 4 banks per group produce 16 device banks Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) CL = t t t 22/ RCD RP RC PC4- 24 21 20 19 18 17 16 15 14 13 12 11 10 9 (ns) (ns) (ns) -3G2 3200 3200 3200/ 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 13.75 13.75 45.75 -2G9 2933 2933/ 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.32 14.32 46.32 2933 PDF: CCMTD-1725822587-9907 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 asf18c2gx72az.pdf Rev. E 11/17 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Speed Grade16GB (x72, ECC, DR) 288-Pin DDR4 UDIMM Features Table 1: Key Timing Parameters (Continued) Data Rate (MT/s) CL = t t t 22/ RCD RP RC PC4- 24 21 20 19 18 17 16 15 14 13 12 11 10 9 (ns) (ns) (ns) -2G6 2666 2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G3 2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G1 2133 2133 2133 1866 1866 1600 1600 1333 1333 13.5 13.5 46.5 Table 2: Addressing Parameter 16GB Row address 64K A[15:0] Column address 1K A[9:0] Device bank group address 4 BG[1:0] Device bank address per group 4 BA[1:0] Device configuration 8Gb (1 Gig x 8), 16 banks Module rank address 2 CS_n[1:0] Table 3: Part Numbers and Timing Parameters 16GB Modules 1 Base device: MT40A1G8, 8Gb DDR4 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) 16GB 2 Gig x 72 25.6 GB/s 0.625ns/3200 22-22-22 MTA18ASF2G72AZ-3G2__ MT/s MTA18ASF2G72AZ-2G6__ 16GB 2 Gig x 72 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 MTA18ASF2G72AZ-2G3__ 16GB 2 Gig x 72 19.2 GB/s 0.83ns/2400 MT/s 17-17-17 Notes: 1. The data sheet for the base device can be found at micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MTA18ASF2G72AZ-3G2E1. PDF: CCMTD-1725822587-9907 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 asf18c2gx72az.pdf Rev. E 11/17 EN 2015 Micron Technology, Inc. All rights reserved. Speed Grade

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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