FZ06BIA099FS Vincotech

FZ06BIA099FS target datasheet flowSOL 0 BI 600V/18A Features flow0 housing High efficiency Ultra fast switching frequency Low inductive design SiC in boost and H bridge Target Applications Schematic Transformerless solar inverters Types FZ06BIA099FS Maximum Ratings Tj=25C, unless otherwise specified Parameter Symbol Condition Value Unit Bypass Diode Repetitive peak reverse voltage V 1600 V RRM T =80C h 28 I Forward current per diode FAV DC current A T =80C 38 c Surge forward current I 220 A FSM t =10ms T =25C p j 2 2 I2t-value 220 I t A s T =80C 33 h Power dissipation per Diode P T =T max W tot j j T =80C 50 c Maximum Junction Temperature T max 150 C j Input Boost MOSFET Drain to source breakdown voltage V DS 600 V T =80C 16 h DC drain current I T =T max A D j j T =80C 22 c Pulsed drain current I t limited by T max 112 A Dpulse p j T =80C 54 h P T =T max Power dissipation W tot j j T =80C 96 c V Gate-source peak voltage 20 V GS Maximum Junction Temperature T max 150 C j copyright by Vincotech 1 Revision: 1FZ06BIA099FS target datasheet Maximum Ratings Tj=25C, unless otherwise specified Parameter Symbol Condition Value Unit Input Boost Diode V T =25C Peak Repetitive Reverse Voltage 600 V RRM j T =80C 12 h I T =T max DC forward current F j j A T =80C 17 c Repetitive peak forward current I t limited by T max T =110C 34 FRM p j c A T =80C 23 h Power dissipation P T =T max W tot j j T =80C 41 c Maximum Junction Temperature T max 175 C j Buck Diode Peak Repetitive Reverse Voltage V T =25C 600 V RRM j T =80C 8 h DC forward current I T =T max A F j j T =80C 11 c Repetitive peak forward current I t limited by T max T =110C 17 A FRM p j c T =80C 17 h Power dissipation per Diode P T =T max W tot j j T =80C c 31 T max Maximum Junction Temperature j 175 C Buck MOSFET Drain to source breakdown voltage V 600 V DS T =80C 16 h I T =T max DC drain current A D j j T =80C 22 c I t limited by T max Pulsed drain current Tc=25C 112 A Dpulse p j T =80C 54 h P T =T max Power dissipation W tot j j T =80C 96 c Gate-source peak voltage Vgs 20 V Maximum Junction Temperature T max 150 C j Boost IGBT V Collector-emitter break down voltage 600 V CE T =80C h 22 I T =T max DC collector current C j j A T =80C 27 c Repetitive peak collector current I t limited by T max 60 A Cpuls p j T =80C 50 h Power dissipation per IGBT P T =T max W tot j j T =80C 75 c Gate-emitter peak voltage V 20 V GE t T 150C 6 s SC j Short circuit ratings V V =15V CC GE 360 V T max Maximum Junction Temperature 175 C j copyright by Vincotech 2 Revision: 1