V23990P840A48PM Vincotech

V23990-P840-A48/A49/C48/C49-PM preliminary datasheet flowPIM0 3rd Gen 1200V/15A Features flow0 Housing 2 Clips housing in 12 and 17mm height Trench Fieldstop Technology IGBT4 Optional w/o BRC Target Applications Industrial Drives Schematics Embedded Generation Types V23990-P840-A48-PM 12mm height V23990-P840-A49-PM 17mm height V23990-P840-C48-PM 12mm height w/o BRC V23990-P840-C49-PM 17mm height w/o BRC Maximum Ratings Tj=25C, unless otherwise specified Parameter Symbol Condition Value Unit Input Rectifier Doide Repetitive peak reverse voltage V 1600 V RRM T =80C T =80C 2288 h I Forward current per diode DC current A FAV T =80C c I Surge forward current FSM 220 A t =10ms p 2 I2t-value 240 A2s I t T =80C 33 h Power dissipation per Diode P T =T max W tot j j T =80C c Maximum Junction Temperature T 150 C jmax Transistor Inverter Collector-emitter voltage V 1200 V CE T =80C 19 h DC collector current I T =T max A C j j T =80C c Repetitive peak collector current I tp limited by T max 45 A Cpuls j T =80C 52 h Power dissipation per IGBT P T =T max W tot j j T =80C c Gate-emitter peak voltage V 20 V GE t T 150C 10 s SC j Short circuit ratings V V =15V 800 V CC GE Maximum Junction Temperature T 175 C jmax copyright Vincotech 1 Revision: 2V23990-P840-A48/A49/C48/C49-PM preliminary datasheet Maximum Ratings Tj=25C, unless otherwise specified Parameter Symbol Condition Value Unit Diode Inverter Peak Repetitive Reverse Voltage VRRM 1200 V T =80C 18 h I T =T max DC forward current A F j j T =80C c Repetitive peak forward current I tp limited by T max 30 A FRM j T =80C 38 h Power dissipation per Diode P T =T max W tot j j T =80C c T Maximum Junction Temperature jmax 175 C Transistor BRC Collector-emitter voltage V 1200 V CE T =80C 12 h I T =T max DC collector current A C j j T =80C c Repetitive peak collector current I tp limited by T max T =80C 24 A cpuls j h T =80C 40 h P T =T max Power dissipation per IGBT W tot j j T =80C c V Gate-emitter peak voltage 20 V GE t T 150C SC j 10 s Short circuit ratings V V =15V 800 V CC GE Maximum Junction Temperature T 175 C jmax Diode BRC Peak Repetitive Reverse Voltage V 1200 V RRM T =80C 10 h I T =T max DC forward current A F j j T =80C c I tp limited by T max Repetitive peak forward current T =80C 15 A FRM j h T =80C h 22 Power dissipation per Diode P T =T max W tot j j T =80C c Maximum Junction Temperature T 150 C jmax Thermal properties T Storage temperature -40+125 C stg Operation temperature T -40+150 C jop Insulation properties Insulation voltage V t=2s DC voltage 4000 V is Creepage distance min 12,7 mm Clearance min 12,7 mm copyright Vincotech 2 Revision: 2