Technische Information / Technical Information IGBT-Module F4-75R06W1E3 IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC J V = 600V CES I = 75A / I = 150A C nom CRM Typische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters Induktives Erwrmen und Schweien Inductive Heating and Welding Solar Anwendungen Solar Applications USV-Systeme UPS Systems Elektrische Eigenschaften Electrical Features Niederinduktives Design Low inductive design Niedrige Schaltverluste Low Switching Losses Trench IGBT 3 Trench IGBT 3 Niedriges V Low V CEsat CEsat Mechanische Eigenschaften Mechanical Features Al O Substrat mit kleinem thermischen Al O Substrate with Low Thermal Resistance 2 3 2 3 Widerstand Kompaktes Design Compact design Ltverbindungstechnik Solder Contact Technology Robuste Montage durch integrierte Rugged mounting due to integrated mounting Befestigungsklammern clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: DK date of publication: 2013-10-03 approved by: MB revision: 3.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module F4-75R06W1E3 IGBT-modules IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 600 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 175C I 75 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 100 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 150 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175 P 275 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 75 A, V = 15 V T = 25C 1,45 1,90 V C GE vj Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 1,60 V C GE vj CE sat I = 75 A, V = 15 V T = 150C 1,70 V C GE vj Gate-Schwellenspannung I = 1,20 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,80 C Gate charge Interner Gatewiderstand T = 25C R 0,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 4,60 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,145 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 75 A, V = 300 V T = 25C 0,025 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,025 s R = 5,1 T = 150C 0,025 s Gon vj Anstiegszeit, induktive Last I = 75 A, V = 300 V T = 25C 0,017 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,019 s R = 5,1 T = 150C 0,02 s Gon vj Abschaltverzgerungszeit, induktive Last I = 75 A, V = 300 V T = 25C 0,20 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,22 s R = 5,1 T = 150C 0,23 s Goff vj Fallzeit, induktive Last I = 75 A, V = 300 V T = 25C 0,07 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,09 s R = 5,1 T = 150C 0,10 s Goff vj Einschaltverlustenergie pro Puls I = 75 A, V = 300 V, L = 45 nH T = 25C 0,40 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3600 A/s (Tvj = 150C) Tvj = 125C Eon 0,45 mJ R = 5,1 T = 150C 0,55 mJ Gon vj Abschaltverlustenergie pro Puls I = 75 A, V = 300 V, L = 45 nH T = 25C 1,75 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4200 V/s (Tvj = 150C)Tvj = 125C Eoff 2,20 mJ R = 5,1 T = 150C 2,30 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V t 8 s, T = 25C 530 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 380 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,50 0,55 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,60 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: DK date of publication: 2013-10-03 approved by: MB revision: 3.0 2