512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM 1 MT18VDDT6472A 512MB MT18VDDT12872A 1GB For component data sheets, refer to Microns Web site: www.micron.com Figure 1: 184-Pin UDIMM (MO-206 R/C B) Features 184-pin, unbuffered dual in-line memory module (UDIMM) PCB height: 31.75mm (1.25in) Fast data transfer rates: PC2100, PC2700, or PC3200 512MB (64 Meg x 72) and 1GB (128 Meg x 72) Supports ECC error detection and correction Vdd = VddQ = +2.5V (-40B: Vdd = VddQ = +2.6V) Vddspd = +2.3V to +3.6V 2.5V I/O (SSTL 2-compatible) Internal, pipelined double data rate (DDR) Options Marking 2n-prefetch architecture 2 Operating temperature Bidirectional data strobe (DQS) transmitted/ Commercial (0C T +70C) None A received with datathat is, source-synchronous Industrial (40C T +85C) I A data capture Package Differential clock inputs (CK and CK ) 184-pin DIMM (standard) G Multiple internal device banks for concurrent 184-pin DIMM (Pb-free) Y operation Memory clock, speed, CAS latency Dual rank 5.0ns (200 MHz), 400 MT/s, CL = 3.0 -40B Selectable burst lengths (BL): 2, 4, or 8 6.0ns (167 MHz), 333 MT/s, CL = 2.5 -335 Auto precharge option 1 7.5ns (133 MHz), 266 MT/s, CL = 2.0 -262 Auto refresh and self refresh modes: 7.8125s 1 7.5ns (133 MHz), 266 MT/s, CL = 2.0 -26A maximum average periodic refresh interval 1 7.5ns (133 MHz), 266 MT/s, CL = 2.5 -265 Serial presence-detect (SPD) with EEPROM 1. Not recommended for new designs. Selectable CAS latency (CL) for maximum 2. Contact Micron for industrial temperature compatibility module offerings. Gold edge contacts Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 3 CL = 2.5 CL = 2 (ns) (ns) (ns) Notes -40B PC3200 400 333 266 15 15 55 -335 PC2700 333 266 18 18 60 1 -262 PC2100 266 266 15 15 60 -26A PC2100 266 266 20 20 65 -265 PC2100 266 200 20 20 65 t t Notes: 1. The values of RCD and RP for -335 modules show 18ns to align with industry specifications actual DDR SDRAM device specifications are 15ns. PDF: 09005aef80814e61/Source: 09005aef807f8acb Micron Technology, Inc., reserves the right to change products or specifications without notice. DD18C64 128x72A.fm - Rev. D 9/08 EN 1 2004 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Draft 9/ 9/ 2008512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM Features Table 2: Addressing Parameter 512MB 1GB Refresh count 8K 8K Row address 8K (A0A12) 8K (A0A12) Device bank address 4 (BA0, BA1) 4 (BA0, BA1) Device configuration 256Mb (32 Meg x 8) 512Mb (64 Meg x 8) Column address 1K (A0A9) 2K (A0A9, A11) Module rank address 2 (S0 , S1 ) 2 (S0 , S1 ) Table 3: Part Numbers and Timing Parameters 512MB Modules 1 Base device: MT46V32M8, 256Mb DDR SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18VDDT6472AG-40B 512MB 64 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3 MT18VDDT6472AY-40B 512MB 64 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3 MT18VDDT6472AG-335 512MB 64 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3 MT18VDDT6472AY-335 512MB 64 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3 MT18VDDT6472AG-262 512MB 64 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2-2-2 MT18VDDT6472AG-26A 512MB 64 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2-3-3 MT18VDDT6472AY-26A 512MB 64 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2-3-3 MT18VDDT6472AG-265 512MB 64 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 MT18VDDT6472AY-265 512MB 64 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 Table 4: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT46V64M8, 512Mb DDR SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18VDDT12872AG-40B 1GB 128 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3 MT18VDDT12872AY-40B 1GB 128 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3 MT18VDDT12872AG-335 1GB 128 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3 MT18VDDT12872AY-335 1GB 128 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3 MT18VDDT12872AG-262 1GB 128 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2-2-2 MT18VDDT12872AG-265 1GB 128 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 MT18VDDT12872AY-265 1GB 128 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 Notes: 1. Data sheets for the base devices can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT18VDDT12872AY-335F1. PDF: 09005aef80814e61/Source: 09005aef807f8acb Micron Technology, Inc., reserves the right to change products or specifications without notice. DD18C64 128x72A.fm - Rev. D 9/08 EN 2 2004 Micron Technology, Inc. All rights reserved Draft 9/ 9/ 2008