1Gb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL01GBBB Options Marking Features Voltage Stacked device (two 512Mb die) 2.73.6V L SPI-compatible serial bus interface Density Single and double transfer rate (STR/DTR) 1Gb 01G Clock frequency Device stacking 133 MHz (MAX) for all protocols in STR 2 die stacked B 90 MHz (MAX) for all protocols in DTR Device generation B Dual/quad I/O commands for increased through- Die revision B put up to 90 MB/s Pin configuration Supported protocols in both STR and DTR HOLD 1 Extended I/O protocol RESET and HOLD 8 Dual I/O protocol Sector Size Quad I/O protocol 64KB E Execute-in-place (XIP) Packages JEDEC-standard, RoHS- PROGRAM/ERASE SUSPEND operations compliant Volatile and nonvolatile configuration settings 24-ball T-PBGA 05/6mm x 8mm 12 Software reset (TBGA24) Additional reset pin for selected part numbers 16-pin SOP2, 300 mils (SO16W, SF 3-byte and 4-byte address modes enable memory SO16-Wide, SOIC-16) access beyond 128Mb W-PDFN-8 8mm x 6mm (MLP8 8mm W9 Dedicated 64-byte OTP area outside main memory x 6mm) Readable and user-lockable Standard security 0 Permanent lock with PROGRAM OTP command Special options Erase capability Standard S Die Erase Automotive A Sector erase 64KB uniform granularity Operating temperature range Subsector erase 4KB, 32KB granularity From 40C to +85C IT Security and write protection From 40C to +105C AT Volatile and nonvolatile locking and software write protection for each 64KB sector Nonvolatile configuration locking Password protection Hardware write protection: nonvolatile bits (BP 3:0 and TB) define protected area size Program/erase protection during power-up CRC detects accidental changes to raw data Electronic signature JEDEC-standard 3-byte signature (BA21h) Extended device ID: two additional bytes identify device factory options JESD47H-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP) PDF: 09005aef865ee40a Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt25q-qlkt-L01-BBB-xxT.pdf - Rev. D 06/16 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1Gb, 3V Multiple I/O Serial Flash Memory Features Part Number Ordering Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25Q L xxx A BA 1 E SF - 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 25Q = SPI NOR QS = Qualification samples Voltage Operating Temperature L = 2.73.6V IT = 40C to +85C U = 1.72.0V AT = 40C to +105C (Grade 2 AEC-Q100) Density Special Options 064 = 64Mb (8MB) S = Standard 128 = 128Mb (16MB) A = Automotive quality 256 = 256Mb (32MB) 512 = 512Mb (64MB) Security Features 01G = 1Gb (128MB) 0 = Standard default security 02G = 2Gb (256MB) Package Codes Stack 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array) A = 1 die/1 S 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array) B = 2 die/1 S SC = 8-pin SOP2, 150 mil C = 4 die/1 S SE = 8-pin SOP2, 208 mil SF = 16-pin SOP2, 300 mil Device Generation W7 = 8-pin W-PDFN, 6 x 5mm B = 2nd generation W9 = 8-pin W-PDFN, 8 x 6mm 1 5x = WLCSP package Die Revision A = Rev. A Sector size B = Rev. B E = 64KB sectors, 4KB and 32KB sub-sectors Pin Configuration Option 1 = HOLD pin 3 = RESET pin 8 = RESET & HOLD pin Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability. PDF: 09005aef865ee40a Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt25q-qlkt-L01-BBB-xxT.pdf - Rev. D 06/16 EN 2015 Micron Technology, Inc. All rights reserved.